63 Dia.
10 Rad.
256 TYP.
24
256 TYP.
98
35
24
34
30
98
79
G
D
Excelics
EFC120B-100F
DATA SHEET
Low Distortion GaAs Power FET
HERMETIC 100mil CERAMIC FLANGE PACKAGE
+28.0dBm TYPICAL OUTPUT POWER
HIGH BVgd FOR 10V BIAS
9.0dB TYPICAL POWER GAIN AT 8GHz
0.3 X 1200 MICRON RECESSED "MUSHROOM"
GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP MAX UNIT
P
1dB
Output Power at 1dB Compression f = 8GHz
Vds=10V, Ids=50% Idss f = 12GHz
26.0
28.0
28.0
dBm
G
1dB
Gain at 1dB Compression f = 8GHz
Vds=10V, Ids=50% Idss f = 12GHz
4.0
9.0
6.0
dB
PAE
Gain at 1dB Compression
Vds=10V, Ids=50% Idss f = 12GHz
30
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
160
260
360
mA
Gm
Transconductance Vds=3V, Vgs=0V
100
140
mS
Vp
Pinch-off Voltage Vds=3V, Ids=3.0mA
-2.5
-4.0
V
BVgd
Drain Breakdown Voltage Igd=1.2mA
-15
-20
V
BVgs
Source Breakdown Voltage Igs=1.2mA
-10
-17
V
Rth
Thermal Resistance
43*
o
C/W
*Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
14V
10V
Vgs
Gate-Source Voltage
-8V
-4.5V
Ids
Drain Current
Idss
270mA
Igsf
Forward Gate Current
30mA
5mA
Pin
Input Power
26dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
3.2W
2.7W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
All Dimensions In mils
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