EIA1111-2
UPDATED
02/17/2006
11.0-11.5 GHz 2-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised February 2006
YYWW
ALL DIMENSIONS IN INCHES
.512
.382
.094
Excelics
.650.008
.129
SN
GATE
.060 MIN.
.04
.070 .008
.004
.022
.060 MIN.
DRAIN
.319
FEATURES
11.0
11.5GHz
Bandwidth
Input/Output Impedance Matched to 50 Ohms
+34.0 dBm Output Power at 1dB Compression
11.0 dB Power Gain at 1dB Compression
32% Power Added Efficiency
Hermetic Metal Flange Package
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
800mA
33.0 34.0 dBm
G
1dB
Gain at 1dB Compression f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
800mA
10.0 11.0
dB
G
Gain Flatness f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
800mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 8 V, I
DSQ
800mA f = 11.0-11.5GHz
32 %
Id
1dB
Drain Current at 1dB Compression f = 11.0-11.5GHz
900
1100
mA
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
1400
1800
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 14 mA
-1.0
-2.5
V
R
TH
Thermal Resistance
3
10
11
o
C/W
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12
8V
Vgs
Gate-Source Voltage
-5
-3V
Igsf
Forward Gate Current
21.6mA 7.2mA
Igsr
Reserve Gate Current
-3.6mA -1.2mA
Pin
Input Power
32.5dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65 to +175
o
C
-65 to +175
o
C
Pt
Total Power Dissipation
13W 13W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EIA1111-2
PDF 
ZIP