EIA1111-6
UPDATED
11/15/2005
11.0-11.5 GHz 6-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2005
YYWW
.827.010
.421
.004
.669
.105.008
.168.010
ALL DIMENSIONS IN INCHES
.125
.508.008
.442
SN
.004
.063
.024
.120 MIN
Excelics
.120 MIN
FEATURES
11.0
11.5GHz
Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
10 dB Power Gain at 1dB Compression
35% Power Added Efficiency
Hermetic Metal Flange Package
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
1600mA
36.5 37.5 dBm
G
1dB
Gain at 1dB Compression f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
1600mA
9.0 10.0 dB
G
Gain Flatness f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
1600mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 8 V, I
DSQ
1600mA f = 11.0-11.5GHz
35 %
Id
1dB
Drain Current at 1dB Compression f = 11.0-11.5GHz
1800
2100
mA
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
2800
3500
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 28 mA
-1.0
-2.5
V
R
TH
Thermal Resistance
3
4.5
5.0
o
C/W
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12
8V
Vgs
Gate-Source Voltage
-5
-3V
Ids
Drain Current
I
DSS
3.5A
Igsf
Forward Gate Current
43.2mA 14.4mA
Igsr
Reserve Gate Current
-7.2mA -2.4mA
Pin
Input Power
36.5dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65 to +175
o
C
-65 to +175
o
C
Pt
Total Power Dissipation
30W 30W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EIA1111-6
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