Excelics
EIA1314A-4P
PRELIMINARY DATA SHEET
13.0-14.5 GHz: 4Watt
Internally Matched Power FET
13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
FEATURES HIGH PAE (27% TYPICAL)
+36.0dBm TYPICAL P
1dB
OUTPUT POWER
8.5dB TYPICAL G
1dB
POWER GAIN
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
EIA1314A-4P
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
35.0
36.0
dBm
G
1dB
Gain at 1dB Compression f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
7.5
8.5
dB
PAE
Power Added Efficiency at 1dB compression
f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
27
%
Id
1dB
Drain Current at 1dB Compression
1760
mA
IP
3
Output 3
rd
Order Intercept Point f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
43
dBm
I
dss
Saturated Drain Current Vds=3V, Vgs=0V
2200
2880
3400
mA
G
m
Transconductance Vds=3V, Vgs=0V
3000
mS
V
p
Pinch-off Voltage Vds=3V, Ids=24mA
-1.0
-2.5
V
BV
gd
Drain Breakdown Voltage Igd=9.6mA
-13
-15
V
R
th
Thermal Resistance (Au-Sn Eutectic Attach)
4.5
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
3120mA
Igsf
Forward Gate Current
360mA
60mA
Pin
Input Power
35dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
30W
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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