Excelics
EIA/EIB1819-1P
Not recommended for new designs. Contact factory. Effective 03/2003
18.7-19.7GHz, 1W Internally Matched Power FET
18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
EIA FEATURES HIGH PAE( 25% TYPICAL)
EIB FEATURES HIGH IP3(43dBm TYPICAL)
+30.0/+29.5dBm TYPICAL P
1dB
OUTPUT POWER FOR
EIA/EIB
6.5/5.5dB TYPICAL G
1dB
POWER GAIN FOR EIA/EIB
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
EIA1819-1P
EIB1819-1P
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
29
30.0
29.0
29.5
dBm
G
1dB
Gain at 1dB Compression f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
6.0
6.5
5.0
5.5
dB
PAE
Power Added Efficiency at 1dB compression
f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
25
20
%
Id
1dB
Drain Current at 1dB Compression
440
425
mA
IP
3
Output 3
rd
Order Intercept Point f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
37
43*
dBm
I
dss
Saturated Drain Current Vds=3V, Vgs=0V
550
720
850
550
720
850
mA
G
m
Transconductance Vds=3V, Vgs=0V
760
360
mS
V
p
Pinch-off Voltage Vds=3V, Ids=6mA
-1.0
-2.5
-2.0
-3.5
V
BV
gd
Drain Breakdown Voltage Igd=2.4mA
-13
-15
-15
V
R
th
Thermal Resistance (Au-Sn Eutectic Attach)
16
16
o
C/W
*Typical 45dBc IM3 at Pout=20dBm/Tone
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
Idss
Igsf
Forward Gate Current
90mA
15mA
Pin
Input Power
32dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
8.5W
7.1W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com
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