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Электронный компонент: EIB1213-4P

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EIB1213-4P
UPDATED
06/14/06
12.75-13.25GHz 4W Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised June 2006


FEATURES
12.75-13.25 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.0 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
25% Power Added Efficiency
-46 dBc IM3 at PO = 25.0 dBm SCL
Non-Hermetic Metal Flange Package

ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 12.75-13.25GHz
V
DS
= 8 V, I
DSQ
1600mA
35.0 36.0 dBm
G
1dB
Gain at 1dB Compression f = 12.75-13.25GHz
V
DS
= 8 V, I
DSQ
1600mA
7.50 8.50
dB
G
Gain Flatness f = 12.75-13.25GHz
V
DS
= 8 V, I
DSQ
1600mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 8 V, I
DSQ
1600mA f = 12.75-13.25GHz
25 %
Id
1dB
Drain Current at 1dB Compression f = 12.75-13.25GHz
1700
1900
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L
2
V
DS
= 8 V, I
DSQ
65% IDSS f = 13.25GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
2720
3400
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 24 mA
-2.0
-3.5
V
R
TH
Thermal Resistance
3
4.5
5.0
o
C/W
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
10V
8V
Vgs
Gate-Source Voltage
-5
-4V
Igsf
Forward Gate Current
43.2mA
14.4mA
Igsr
Reverse Gate Current
-7.2mA
-2.4mA
Pin
Input Power
35.0dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65 to +175
o
C
-65 to +175
o
C
Pt
Total Power Dissipation
30W
30W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EIB1213-4P