EIC0910-5
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
SN
YM
Excelics
EIC091
0-5
ISSUED DATE: 04-19-04
9.50-10.50GHz,
5W Internally Matched Power FET
9.50-10.50 GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
HIGH PAE: 30% TYPICAL
+37.5 dBm TYPICAL P
1dB
OUTPUT POWER
7dB TYPICAL G
1dB
POWER GAIN
HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
EIC0910-5
SYMBOLS PARAMETERS/TEST
CONDITIONS
MIN TYP MAX
UNIT
P
1dB
Output Power at 1dB Compression
f=9.5-10.5GHz, Vds=10V, Idsq=1600mA
36.5 37.5 dBm
G
1dB
Gain at 1dB Compression
f=9.5-10.5GHz, Vds=10V, Idsq=1600mA
6 7 dB
G
Gain Flatness
f = 9.5-10.5GHz, Vds = 10 V, Idsq = 1600mA
0.6
dB
PAE
Power Added Efficiency at 1dB compression
f=9.5-10.5GHz, Vds=10V, Idsq=1600mA
30 %
Id
1dB
Drain Current at 1dB Compression
1700
1900
mA
IM
3
Output 3
rd
Order Intermodulation Distortion f=10.5GHz
f=10MHz 2-Tone Test. Pout=26.5 dBm S.C.L
Ids @ 65% Idss
-43 -46
dBc
I
dss
Saturated Drain Current Vds=3V, Vgs=0V
2900
3500
mA
V
p
Pinch-off Voltage Vds=3V, Ids=30mA
-2.5
-4
V
R
th
Thermal Resistance (Au-Sn Eutectic Attach)
5.0
5.5
o
C/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25
C
SYMBOLS PARAMETERS
CONTINUOUS
1,2
Vds
Drain-Source Voltage
10V
Vgs
Gate-Source Voltage
-4.5V
Ids
Drain Current
Idss
Igsf
Forward Gate Current
60mA
Pin
Input Power
@ 3dB Compression
Tch
Channel Temperature
150
o
C
Tstg
Storage Temperature
-65 to +150
o
C
Pt
Total Power Dissipation
23W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
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