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Электронный компонент: EIC1010A-8

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EIC1010A-8
UPDATED
07/20/2005
10.00-10.25 GHz 8-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2005
FEATURES
10.00 10.25GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
31% Power Added Efficiency
-46 dBc IM3 at Po = 28 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH




ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 10.00-10.25GHz
V
DS
= 9 V, I
DSQ
2200mA
38.0 39.0 dBm
G
1dB
Gain at 1dB Compression f = 10.00-10.25GHz
V
DS
= 9 V, I
DSQ
2200mA
6.5 7.5 dB
G
Gain Flatness f = 10.00-10.25GHz
V
DS
= 9 V, I
DSQ
2200mA
0.5
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 9 V, I
DSQ
2200mA f = 10.00-10.25GHz
31 %
Id
1dB
Drain Current at 1dB Compression f = 10.00-10.25GHz
2300
2600
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28 dBm S.C.L
2
V
DS
= 9 V, I
DSQ
65% IDSS f = 10.25 GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
4000
5000
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 40 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
3.5
4.0
o
C/W
Note: 1.) Tested with 100 Ohm gate resistor. 2.) S.C.L. = Single Carrier Level. 3.) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
80 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
38 W
T
CH
Channel
Temperature
175C
T
STG
Storage
Temperature -65/+175C
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
EIC1010A-8
UPDATED
07/20/2005
10.00-10.25 GHz 8-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2005
9.75
9.875
10
10.125
10.25
10.375
10.5
Frequency (GHz)
S21 and S12
-20
-15
-10
-5
0
5
10
S
21 a
nd S
12 (
d
B
)
DB(|S[2,1]|) *
EIC1010A-8
DB(|S[1,2]|) *
EIC1010A-8
0
1.0
1.
0
-1
.0
10.0
10. 0
-10
.0
5.0
5.0
-5.
0
2.0
2.
0
-2
.
0
3.0
3.
0
-3
.0
4.0
4.0
-4.
0
0.2
0.2
-0.
2
0.4
0.
4
-0
.4
0.6
0.
6
-0
.
6
0.8
0.
8
-0
.
8
S11 and S22
Swp Max
10.5GHz
Swp Min
9.75GHz
S[1,1] *
EIC1010A-8
S[2,2] *
EIC1010A-8
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 9 V, I
DSQ
2200mA













FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
9.750 0.335 -56.33 2.652 129.33 0.116 84.60 0.465 13.82
9.875
0.252
-76.92
2.697
114.11
0.120
70.15
0.450
-0.78
10.000 0.171 -106.57 2.711 98.91 0.124 54.94 0.411 -15.94
10.125
0.133
-155.37
2.715
83.63
0.124
39.56
0.379
-31.58
10.250 0.166 156.13 2.679 68.11 0.123 24.26 0.339 -48.49
10.375
0.228
124.27
2.631
52.77
0.124
10.00
0.301
-67.38
10.500 0.292 103.20 2.561 38.07 0.122 -5.08 0.268 -86.62















EIC1010A-8
UPDATED
07/20/2005
10.00-10.25 GHz 8-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2005


Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
175
Case Temperature (C)
T
o
t
a
l
P
o
w
e
r
D
i
s
s
i
pat
i
on (
W
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C.L
.]
(
d
B
m
)
IM3




Typical Power Data (V
DS
= 9 V, I
DSQ
= 2200 mA)

Typical IM3 Data (V
DS
= 9 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
35
36
37
38
39
40
9.6
9.8
10.0
10.2
10.4
10.6
Frequency (GHz)
P-
1
d
B (
d
Bm
)
7
8
9
10
11
12
G-
1
d
B
(
d
B
)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 10.25 GHz, f2 = 10.26 GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
20 21 22 23 24 25 26 27 28 29 30 31 32 33
Pout [S.C.L.] (dBm)
IM
3
(
d
B
c
)
IM3 (dBc)






EIC1010A-8
UPDATED
07/20/2005
10.00-10.25 GHz 8-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2005
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
SN
Excelics
YYWW
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EIC1010A-8 Industrial
10.00-10.25
GHz 38.0
-43
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EIC1010A-8