EIC1011-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
10.70-11.70 GHz 4-Watt Internally-Matched Power FET
FEATURES
10.70-11.70
GHz
Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.0 dBm Output Power at 1dB Compression
6.5 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at Po = 25.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EIC1011-4 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 10.7-11.7GHz
V
DS
= 10 V, I
DSQ
= 1100mA
35.5 36.0
dBm
G
1dB
Gain at 1dB Compression f = 10.7-11.7GHz
V
DS
= 10 V, I
DSQ
= 1100mA
5.5 6.5 dB
G
Gain Flatness f = 10.7-11.7GHz
V
DS
= 10 V, I
DSQ
= 1100mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
= 1100mA f = 10.7-11.7GHz
30 %
Id
1dB
Drain Current at 1dB Compression f = 10.7-11.7GHz
1100
1300
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 11.7GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
2000
2500
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 20 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
5.5
6.0
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
EIC1011-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
10.5
11
11.5
11.9
Frequency (GHz)
S21 and S12
-20
-10
0
10
S
2
1
a
nd S
1
2 (
d
B
)
DB(|S[2,1]|)
EIC1011-4
DB(|S[1,2]|)
EIC1011-4
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
40 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
21 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
= 1100mA
0
1.
0
1.0
-1
.0
10
.0
10.0
-1
0.0
5.
0
5.0
-5
.0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.
0
-4
.0
0.
2
0.
2
-0.
2
0.
4
0.
4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0
.
8
-
0
.8
S11 and S22
Swp Max
11.9GHz
Swp Min
10.5GHz
S[1,1]
EIC1011-4
S[2,2]
EIC1011-4
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
10.0 0.5739 108.35 2.1901 -123.52 0.1038 -170.96 0.4584 55.24
10.2
0.5419
89.44
2.2517
-141.43
0.1081
171.77
0.4527
38.81
10.4 0.5027 69.8 2.3146
-159.96 0.1142 153.91 0.4397 21.79
10.6
0.454
49.43
2.3701
-178.6
0.1209
135.5
0.4186
2.16
10.8 0.3919 26.75 2.4477 162.08 0.1272 116.3 0.3848 -20.15
11.0
0.3168
2.48
2.5075
141.24
0.1368
95.69
0.359
-45.27
11.2 0.2355 -25.9 2.5133 119.63 0.1399 74.8 0.342 -75.08
11.4
0.1589
-62.62
2.4807
97.75
0.1436
52.35
0.3447
-107.19
11.6 0.1084
-118.22
2.4142 76.04 0.141 30.62 0.3633
-137.98
11.8
0.1171
176.36
2.2904
53.87
0.1378
9.3
0.4005
-166.15
12.0 0.1688 130.2 2.157 32.3 0.1337 -13.09 0.4409 169.07
EIC1011-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
3
6
9
12
15
18
21
24
0
25
50
75
100
125
150
Case Temperature (C)
T
o
tal
P
o
w
e
r
D
i
s
s
i
pa
ti
o
n
(
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C.L
.]
(
d
B
m
)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 1100 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
33
34
35
36
37
38
10.6
10.8
11.0
11.2
11.4
11.6
11.8
Frequency (GHz)
P
-
1
d
B (
d
Bm)
5
6
7
8
9
10
G
-
1
d
B (d
B)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 11.70 GHz, f2 =11.71 GHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
20
21
22
23
24
25
26
27
28
29
30
31
32
Pout [S.C.L.] (dBm)
IM
3
(
d
B
c
)
IM3 (dBc)
EIC1011-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
Excelics
SN
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EIC1011-4 Industrial
10.70-11.70 GHz
35.5
-43
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EIC1011-4
SOURCE
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