EIC1212-8
UPDATED
01/04/2006
12.20-12.70 GHz 8-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised January 2006
YYWW
.827.010
.421
.004
.669
.105.008
.168.010
ALL DIMENSIONS IN INCHES
.125
.508.008
.442
SN
.004
.063
.024
.120 MIN
Excelics
.120 MIN
FEATURES
12.20 12.70GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
6.5 dB Power Gain at 1dB Compression
27% Power Added Efficiency
-46 dBc IM3 at PO = 28.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 12.20-12.70GHz
V
DS
= 10 V, I
DSQ
2200mA
38.5 39.0 dBm
G
1dB
Gain at 1dB Compression f = 12.20-12.70GHz
V
DS
= 10 V, I
DSQ
2200mA
5.5 6.5 dB
G
Gain Flatness f = 12.20-12.70GHz
V
DS
= 10 V, I
DSQ
2200mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
2200mA f = 12.20-12.70GHz
27 %
Id
1dB
Drain Current at 1dB Compression f = 12.20-12.70GHz
2300
2600
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 12.70GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
4000
5000
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 40 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
3.5
4.0
o
C/W
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
80 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
38 W
T
CH
Channel
Temperature
175C
T
STG
Storage
Temperature -65/+175C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
EIC1212-8
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