EIC1414-12
ISSUED
6/30/2006
14.0-14.5 GHz 12-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised June 2006
.669
.004
.421
.827.010
.105.008
.168.010
ALL DIM ENSIO NS IN INCHES
.442
.508.008
.125
.004
.063
.024
.120 MIN
Excelics
.120 M IN
FEATURES
14.0
14.5GHz
Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5 dBm Output Power at 1dB Compression
5.0 dB Power Gain at 1dB Compression
20% Power Added Efficiency
Hermetic Metal Flange Package
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 14.0-14.5GHz
V
DS
= 10 V, I
DSQ
3500mA
39.5 40.5 dBm
G
1dB
Gain at 1dB Compression f = 14.0-14.5GHz
V
DS
= 10 V, I
DSQ
3500mA
4.0 5.0 dB
G
Gain Flatness f = 14.0-14.5GHz
V
DS
= 10 V, I
DSQ
3500mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
3500mA f = 14.0-14.5GHz
20 %
Id
1dB
Drain Current at 1dB Compression f = 14.0-14.5GHz
3600
4200
mA
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
6000
7500
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 60 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
2.3
2.6
o
C/W
Note: 1) Tested with 50 Ohm gate resistor. 2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
15
10V
Vgs
Gate-Source Voltage
-5
-4V
Igsf
Forward Gate Current
136mA 45mA
Igsr
Reverse Gate Current
-23mA -8mA
Pin
Input Power
39.5dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65 to +175
o
C
-65 to +175
o
C
Pt
Total Power Dissipation
58W 58W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EIC1414-12
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