EIC1414-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
14.00-14.50 GHz 4-Watt Internally-Matched Power FET
FEATURES
14.00-14.50
GHz
Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.0 dBm Output Power at 1dB Compression
6.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
-45 dBc IM3 at Po = 25.0 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EIC1414-4 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 14.00-14.50GHz
V
DS
= 10 V, I
DSQ
1100mA
35.5 36.0
dBm
G
1dB
Gain at 1dB Compression f = 14.00-14.50GHz
V
DS
= 10 V, I
DSQ
1100mA
5.0 6.0 dB
G
Gain Flatness f = 14.00-14.50GHz
V
DS
= 10 V, I
DSQ
1100mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
1100mA f = 14.00-14.50GHz
25 %
Id
1dB
Drain Current at 1dB Compression f = 14.00-14.50GHz
1100
1300
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 14.50GHz
-42 -45 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
2080
2880
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 20 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
5.5
6.0
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
EIC1414-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
40 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
21 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
1100mA
0
1.0
-1.
0
1.
0
10.
0
-10.0
10.
0
5.0
-5.0
5.0
2.0
-2
.0
2.
0
3.0
-3.
0
3.0
4.0
-4.0
4.0
0.2
-0.
2
0.2
0.4
-0
.4
0.
4
0.6
-0
.6
0.
6
0.8
-
0
.
8
0
.
8
0
1.
0
1.
0
-1.
0
10
.0
10.0
-1
0.
0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.
0
-4
.0
0.
2
0.2
-0.
2
0.
4
0.
4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0
.
8
-
0
.
8
S11 and S22
Swp Max
15GHz
Swp Min
13GHz
S[1,1] *
EIC1314-4
S[2,2] *
EIC1314-4
13
13.5
14
14.5
15
Frequency (GHz)
S21 and S12
-30
-20
-10
0
10
20
S2
1 an
d
S1
2 (d
B)
DB(|S[2,1]|) *
EIC1314-4
DB(|S[1,2]|) *
EIC1314-4
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
13.0 0.5078 -2.28 2.0327 -117.68 0.0863 -144.55 0.5488 -133.93
13.2
0.4776
-17.96
2.1494
-132.66
0.095
-160.68
0.4743
-146.87
13.4 0.4118 -33.24 2.2575 -148.8 0.1036 -176.01 0.4121 -161.98
13.6
0.3207
-49.12
2.3651
-165.3
0.1096
167.92
0.3481
179.95
13.8 0.2203 -70.57 2.431 176.6 0.1188 150.43 0.2602 155.82
14.0
0.1094
-102.37
2.4478
158.24
0.1217
132.03
0.1895
123.3
14.2 0.0627 152.39 2.4123 139.92 0.1227 115.1 0.1576 76.56
14.4
0.1622
96.78
2.3192
121.93
0.1196
96.75
0.1927
30.27
14.6 0.2642 73.83 2.1858 104.48 0.1158 80.23 0.2491 1.19
14.8
0.353
56.65
2.0523
88.18
0.1109
63.47
0.3031
-18.21
15.0 0.421 42.58 1.9018 72.39 0.1037 48.43 0.3615 -34.26
EIC1414-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
3
6
9
12
15
18
21
24
0
25
50
75
100
125
150
Case Temperature (C)
To
t
a
l
P
o
w
e
r
D
i
s
s
ip
a
t
io
n
(
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C.L
.]
(
d
B
m
)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 1100 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
32
33
34
35
36
37
13.4
13.6
13.8
14.0
14.2
14.4
14.6
14.8
Frequency (GHz)
P-
1
d
B (
d
Bm
)
4
5
6
7
8
9
G-
1
d
B
(
d
B
)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 14.5 GHz, f2 = 14.51 GHz
-55
-50
-45
-40
-35
-30
-25
-20
-15
19
20 21
22 23
24 25
26 27
28 29
30 31
32
Pout [S.C.L.] (dBm)
IM
3
(d
B
c
)
IM3 (dBc)
EIC1414-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
Excelics
SN
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EIC1414-4 Industrial
14.00-14.50 GHz
35.5
-42
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EIC1414-4
SOURCE
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