EIC1414-8
ISSUED
6/30/2006
14.0-14.5 GHz 8-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised June 2006
Excelics
.094
.382
.512
ALL DIMENSIONS IN INCHES
.650.008
.129
GATE
.060 MIN.
.045
.070 .008
.004
.060 MIN.
.022
DRAIN
.319
FEATURES
14.0
14.5GHz
Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
5.0 dB Power Gain at 1dB Compression
24% Power Added Efficiency
Hermetic Metal Flange Package
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 14.0-14.5GHz
V
DS
= 10 V, I
DSQ
2200mA
38.5 39.0 dBm
G
1dB
Gain at 1dB Compression f = 14.0-14.5GHz
V
DS
= 10 V, I
DSQ
2200mA
4.0 5.0 dB
G
Gain Flatness f = 14.0-14.5GHz
V
DS
= 10 V, I
DSQ
2200mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
2200mA f = 14.0-14.5GHz
24 %
Id
1dB
Drain Current at 1dB Compression f = 14.0-14.5GHz
2300
2600
mA
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
4000
5000
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 40 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
3.5
4.0
o
C/W
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
15
10V
Vgs
Gate-Source Voltage
-5
-4V
Igsf
Forward Gate Current
86.4mA 28.8mA
Igsr
Reverse Gate Current
-14.4mA -4.8mA
Pin
Input Power
38.5dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65 to +175
o
C
-65 to +175
o
C
Pt
Total Power Dissipation
38W 38W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EIC1414-8
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