EIC2832-2
UPDATED
02/14/2006
2.80-3.20 GHz 2-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised February 2006
SYMBOL
PARAMETERS/TEST CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 2.80-3.20GHz
V
DS
= 10 V, I
DSQ
550mA
32.5 33.5 dBm
G
1dB
Gain at 1dB Compression f = 2.80-3.20GHz
V
DS
= 10 V, I
DSQ
550mA
11.0 12.0
dB
G
Gain Flatness f = 2.80-3.20GHz
V
DS
= 10 V, I
DSQ
550mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
550mA f = 2.80-3.20GHz
35 %
Id
1dB
Drain Current at 1dB Compression f = 2.80-3.20GHz
600
700
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 3.20GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
1000
1250
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 10 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
11
12
o
C/W
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
15
10V
Vgs
Gate-Source Voltage
-5
-4V
Igsf
Forward Gate Current
21.6mA
7.2mA
Igsr
Reserve Gate Current
-3.6mA
-1.2mA
Pin
Input Power
32.5dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65 to +175
o
C
-65 to +175
o
C
Pt
Total Power Dissipation
12.5W
12.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
YYWW
.827.010
.421
.004
.669
.105.008
.168.010
ALL DIMENSIONS IN INCHES
.125
.508.008
.442
SN
.004
.063
.024
.120 MIN
Excelics
.120 MIN
FEATURES
2.80
3.20GHz
Bandwidth
Input/Output Impedance Matched to 50 Ohms
+33.5 dBm Output Power at 1dB Compression
12.0 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-46 dBc IM3 at PO = 22.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
EIC2832-2
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