EIC5964-10
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2004
5.90-6.40 GHz 10-Watt Internally-Matched Power FET
Issued Date: 06-22-04
FEATURES
5.90 6.40 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5 dBm Output Power at 1dB Compression
10.0 dB Power Gain at 1dB Compression
37% Power Added Efficiency
-46 dBc IM3 at Po = 29.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EIC5964-10 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 5.90-6.40GHz
V
DS
= 10 V, I
DSQ
3200mA
39.5 40.5
dBm
G
1dB
Gain at 1dB Compression f = 5.90-6.40GHz
V
DS
= 10 V, I
DSQ
3200mA
9.0 10.0
dB
G
Gain Flatness f = 5.90-6.40GHz
V
DS
= 10 V, I
DSQ
3200mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
3200mA f = 5.90-6.40GHz
37 %
Id
1dB
Drain Current at 1dB Compression f = 5.90-6.40GHz
3200
3600
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS f = 6.40 GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
5800
6400
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 60 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
2.5
3.0
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
EIC5964-10
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2004
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
120 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
42 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
3200mA
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
5.00 0.842 -10.380 2.138 85.680 0.066 23.190 0.279 -146.210
5.25
0.770
-36.270
2.452
52.620
0.075
-8.650
0.338
160.980
5.50 0.668 -66.150 2.749 17.860 0.090 -42.660 0.414 119.050
5.75
0.535
-102.210
3.044
-18.590
0.104
-77.630
0.459
82.070
6.00 0.378
-148.060
3.268
-57.830 0.118 -116.340 0.453 42.110
6.25
0.226
142.100
3.354
-99.660
0.126
-157.830
0.407
-5.740
6.50 0.243 34.670 3.165
-144.200
0.123 159.460 0.366 -66.250
6.75
0.423
-32.680
2.662
171.730
0.107
116.550
0.395
-128.840
7.00 0.573 -76.790 2.037 131.380 0.084 77.710 0.470 -176.150
7.25
0.675
-110.330
1.498
95.780
0.066
45.490
0.549
151.630
7.50 0.750
-137.290
1.090 64.300 0.050 12.690 0.624 128.540
0
1.0
-1
.0
1.
0
10.
0
-10.0
10.
0
5.0
-5.0
5.0
2.0
-2
.0
2.
0
3.0
-3.
0
3.0
4.0
-4.
0
4.0
0.2
-0.
2
0.2
0.4
-0
.4
0.
4
0.6
-0
.6
0.
6
0.8
-
0
.
8
0
.
8
0
1.0
1.
0
-1
.0
10.
0
10.0
-1
0.
0
5.0
5.0
-5.
0
2.0
2.
0
-2
.0
3.0
3.
0
-3
.0
4.0
4.
0
-4
.0
0.2
0.2
-0.
2
0.4
0.
4
-0
.4
0.6
0.
6
-0
.6
0.8
0
.
8
-
0
.
8
S11 and S22
Swp Max
6.8GHz
Swp Min
5.5GHz
S[1,1] *
EIC5964-10
S[2,2] *
EIC5964-10
5.5
6
6.5
6.8
Frequency (GHz)
S21 and S12
-30
-20
-10
0
10
20
S
2
1 and S12 (d
B)
DB(|S[2,1]|) *
EIC5964-10
DB(|S[1,2]|) *
EIC5964-10
EIC5964-10
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2004
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
6
12
18
24
30
36
42
48
0
25
50
75
100
125
150
Case Temperature (C)
T
o
t
a
l
P
o
w
e
r
D
i
s
s
i
pat
i
on (
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C.L
.]
(
d
B
m
)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 3200 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
36
37
38
39
40
41
42
5.8
5.9
6.0
6.1
6.2
6.3
6.4
6.5
Frequency (GHz)
P-
1
d
B (
d
Bm)
9
10
11
12
13
14
15
G-
1
d
B
(
d
B
)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 6.16 GHz, f2 = 6.15 GHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
24
25
26
27
28
29
30
31
32
33
34
35
36
37
Pout [S.C.L.] (dBm)
IM
3
(
d
B
c
)
IM3 (dBc)
EIC5964-10
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2004
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
GATE
SN
YM
DRAIN
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EIC5964-10 Industrial
5.90-6.40
GHz 39.5
-43
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
Excelics
EIC5964-10
SOURCE
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