EIC5964-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
5.90-6.40 GHz 5-Watt Internally-Matched Power FET
FEATURES
5.90 6.40 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
10.0 dB Power Gain at 1dB Compression
37% Power Added Efficiency
-46 dBc IM3 at Po = 26.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EIC5964-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 5.90-6.40GHz
V
DS
= 10 V, I
DSQ
1600mA
36.5 37.5
dBm
G
1dB
Gain at 1dB Compression f = 5.90-6.40GHz
V
DS
= 10 V, I
DSQ
1600mA
9 10 dB
G
Gain Flatness f = 5.90-6.40GHz
V
DS
= 10 V, I
DSQ
1600mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
1600mA f = 5.90-6.40GHz
37 %
Id
1dB
Drain Current at 1dB Compression f = 5.90-6.40GHz
1600
1900
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS f = 6.40 GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
2900
3500
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 30 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
5.0
5.5
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
EIC5964-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
5.7
6
6.3
6.6
Frequency (GHz)
S21 and S12
-30
-20
-10
0
10
20
S
2
1 an
d S
1
2 (
d
B
)
DB(|S[2,1]|)
EIC5964-5
DB(|S[1,2]|)
EIC5964-5
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
60 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
23 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
1600mA
0
1.0
1.0
-1.0
10.0
10.0
-1
0.0
5.0
5.0
-5
.0
2.0
2.
0
-2
.0
3.0
3.
0
-3
.0
4.0
4.
0
-4
.0
0.2
0.
2
-0.
2
0.4
0.
4
-0
.4
0.6
0.
6
-0
.6
0.8
0
.
8
-
0
.8
S11 and S22
Swp Max
6.6GHz
Swp Min
5.7GHz
S[1,1]
EIC5964-5
S[2,2]
EIC5964-5
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
5.0 0.8762
-68.84
1.7994
80.39 0.0328 29.57 0.4953 -79.67
5.2
0.8635
-84.6
2.007
59.65
0.038
8.76
0.4698
-103
5.4 0.8302
-101.78
2.2788
37.21 0.0467 -14.33 0.4494 -128.88
5.6
0.7786
-121
2.6401
12.91
0.0578
-41.76
0.436
-157.76
5.8 0.6819 -144.4 3.1226 -14.08 0.0756 -70.41 0.4251 169.64
6.0
0.5026
-175.32
3.6773
-46.63
0.0962
-102.08
0.4017
129.34
6.2 0.2156 131.27 4.0039 -85.29 0.1122 -140.56 0.3411 76.64
6.4
0.2277
-19.28
3.7685
-126.36
0.1151
177.65
0.2831
9.5
6.6 0.5
-68.73
3.096
-163.58 0.1006 142.35 0.2871 -55.38
6.8
0.6636
-97.49
2.4237
165.14
0.0842
112.7
0.3252
-99.88
7.0 0.7514
-119.49
1.8902
138.45 0.068 87.64 0.3686 -130.68
EIC5964-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
0
25
50
75
100
125
150
Case Temperature (C)
T
o
t
a
l
P
o
w
e
r
D
i
s
s
i
pat
i
on (
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C.L
.
]
(
d
B
m
)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 1600 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
35
36
37
38
39
40
5.8
5.9
6.0
6.1
6.2
6.3
6.4
6.5
Frequency (GHz)
P-1
d
B (
d
Bm
)
9
10
11
12
13
14
G
-
1
d
B (
d
B)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 6.40 GHz, f2 = 6.41 GHz
-70
-60
-50
-40
-30
-20
-10
21
22 23
24 25
26 27
28 29
30 31
32 33
34
Pout [S.C.L.] (dBm)
IM
3
(
d
B
c
)
IM3 (dBc)
EIC5964-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
SN
Excelics
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EIC5964-5 Industrial 5.9-6.4
GHz 36.5
-43
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EIC5964-5
SOURCE
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