EIC6472-8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
6.40-7.20 GHz 8-Watt Internally-Matched Power FET
FEATURES
6.40 7.20 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
9.5 dB Power Gain at 1dB Compression
36% Power Added Efficiency
-46 dBc IM3 at Po = 28.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EIC6472-8 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 6.40-7.20GHz
V
DS
= 10 V, I
DSQ
2200mA
38.5 39.5
dBm
G
1dB
Gain at 1dB Compression f = 6.40-7.20GHz
V
DS
= 10 V, I
DSQ
2200mA
8.5 9.5 dB
G
Gain Flatness f = 6.40-7.20GHz
V
DS
= 10 V, I
DSQ
2200mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
2200mA f = 6.40-7.20GHz
36 %
Id
1dB
Drain Current at 1dB Compression f = 6.40-7.20GHz
2200
2600
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS f = 7.20 GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
4000
4500
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 40 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
3.5
4
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
EIC6472-8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
0
1.0
1.
0
-1
.0
10.
0
10.0
-1
0.0
5.0
5.0
-5
.0
2.0
2.
0
-2
.0
3.0
3.
0
-3
.0
4.0
4.
0
-4
.0
0.2
0.
2
-0.
2
0.4
0.4
-0
.4
0.6
0.
6
-0
.6
0.8
0
.
8
-
0
.8
S11 and S22
Swp Max
7.4GHz
Swp Min
6.2GHz
S[1,1]
EIC6472-8
S[2,2]
EIC6472-8
6.2
6.4
6.6
6.8
7
7.2
7.4
Frequency (GHz)
S21 and S12
-20
-10
0
10
20
S
21 and
S
12 (
d
B
)
DB(|S[2,1]|)
EIC6472-8
DB(|S[1,2]|)
EIC6472-8
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
80 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
32 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
2200mA
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
5.8 0.7691
-59.89
2.4709
37.54 0.0842 -23 0.3937 169.91
6.0
0.6925
-81.02
2.737
11.91
0.097
-47.68
0.4423
135.72
6.2 0.5944
-105.44
3.0092 -14.9 0.1089 -73.62 0.493 104.65
6.4
0.4754
-134.77
3.2245
-43.07
0.1208
-101.3
0.5112
75.2
6.6 0.3499
-173.19
3.4136
-72.55 0.1315 -129.81 0.4959 45.51
6.8
0.2507
129.61
3.4973
-103.52
0.1389
-160.34
0.4386
13.78
7.0 0.2665
59.43 3.4291
-135.28
0.1408 169 0.3388
-22.61
7.2
0.3712
5.6
3.2015
-167.15
0.1359
138.35
0.2387
-70.85
7.4
0.4764
-33.41
2.8736
162.48
0.1272
108.36
0.2196
-134.09
7.6
0.5578
-67.13
2.5143
132.86
0.1125
79.22
0.3012
174.34
7.8
0.6096
-97.26
2.1393
104.58
0.0965
51.48
0.4095
141.65
8.0
0.6451
-124.95
1.7837
77.58
0.0825
26.06
0.5064
118.52
EIC6472-8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
4
8
12
16
20
24
28
32
36
0
25
50
75
100
125
150
Case Temperature (C)
T
o
tal
P
o
w
e
r
D
i
s
s
i
pa
ti
o
n
(
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C.L
.]
(
d
B
m
)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 2200 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
35
36
37
38
39
40
41
6.2
6.4
6.6
6.8
7.0
7.2
7.4
Frequency (GHz)
P-1
d
B (d
B
m
)
8
9
10
11
12
13
14
G
-
1dB
(
d
B
)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 7.20 GHz, f2 = 7.21 GHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
23
24
25
26
27
28
29
30
31
32
33
34
35
Pout [S.C.L.] (dBm)
IM
3
(d
Bc
)
IM3 (dBc)
EIC6472-8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
SN
Excelics
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EIC6472-8 Industrial 6.4-7.2
GHz 38.5
-43
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EIC6472-8
SOURCE
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