EIC7179-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2004
7.10-7.90 GHz 5-Watt Internally-Matched Power FET
Issued Date: 06-22-04
FEATURES
7.10 7.90 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
9.0 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-46 dBc IM3 at Po = 25.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EIC7179-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 7.10-7.90GHz
V
DS
= 10 V, I
DSQ
1600mA
36.5 37.5
dBm
G
1dB
Gain at 1dB Compression f = 7.10-7.90GHz
V
DS
= 10 V, I
DSQ
1600mA
7.5 8.5 dB
G
Gain Flatness f = 7.10-7.90GHz
V
DS
= 10 V, I
DSQ
1600mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
1600mA f = 7.10-7.90GHz
35 %
Id
1dB
Drain Current at 1dB Compression f = 7.10-7.90GHz
1600
2000
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 7.90GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
2900
3500
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 30 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
5.0
5.5
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
EIC7179-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2004
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
60 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
23 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
1600mA
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
6.25 0.752
168.140
2.901 -7.820 0.073 -64.840 0.232 -147.530
6.50
0.711
136.260
2.974
-39.130
0.081
-97.090
0.224
159.760
6.75 0.659
105.510
3.004
-70.350 0.088 -127.140 0.267 117.460
7.00
0.591
75.820
2.986
-100.630
0.096
-156.850
0.322
82.450
7.25 0.487 46.300 3.063
-131.620 0.103 172.760 0.358 53.770
7.50
0.320
11.650
3.161
-165.600
0.111
140.350
0.377
21.450
7.75 0.097 -69.360 3.168 156.190 0.116 103.520 0.364 -18.780
8.00
0.315
154.860
2.860
113.990
0.108
62.710
0.326
-72.420
8.25 0.600
114.000
2.233 73.400 0.087 23.160 0.323 -131.860
8.50
0.769
85.120
1.607
38.360
0.063
-9.110
0.379
-178.690
8.75 0.843 64.260 1.123 9.490 0.046 -36.130 0.455 151.440
0
1.
0
-1
.0
1.
0
1
0.0
-10.0
10.
0
5.
0
-5.0
5.0
2.
0
-2
.0
2.
0
3.
0
-3.
0
3.0
4.
0
-4.
0
4.0
0.
2
-0.
2
0.2
0.
4
-0
.4
0.
4
0.
6
-0
.6
0.
6
0.
8
-
0
.
8
0
.
8
0
1.0
1.
0
-1
.0
10.
0
10.0
-1
0.
0
5.0
5.0
-5.
0
2.0
2.
0
-2
.0
3.0
3.
0
-3
.0
4.0
4.
0
-4.
0
0.2
0.2
-0.
2
0.4
0.
4
-0
.4
0.6
0.
6
-0
.6
0.8
0
.
8
-
0
.
8
S11 and S22
Swp Max
8.5GHz
Swp Min
6.5GHz
S[1,1] *
EIC7179-5
S[2,2] *
EIC7179-5
6.5
7
7.5
8
8.5
Frequency (GHz)
S21 and S12
-30
-20
-10
0
10
20
S21 an
d
S
1
2 (d
B
)
DB(|S[2,1]|) *
EIC7179-5
DB(|S[1,2]|) *
EIC7179-5
EIC7179-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2004
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
4
8
12
16
20
24
0
25
50
75
100
125
150
Case Temperature (C)
T
o
t
a
l
P
o
w
e
r
D
i
s
s
i
pat
i
on (
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C.L
.]
(
d
B
m
)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 1600 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
35
36
37
38
39
40
7.0
7.2
7.4
7.6
7.8
8.0
Frequency (GHz)
P-
1
d
B (
d
Bm)
7
8
9
10
11
12
G-
1
d
B
(
d
B
)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 7.90 GHz, f2 = 7.91 GHz
-70
-60
-50
-40
-30
-20
-10
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
Pout [S.C.L.] (dBm)
IM
3
(
d
B
c
)
IM3 (dBc)
EIC7179-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2004
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
SN
Excelics
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EIC7179-5 Industrial
7.10-7.90
GHz 36.5
-43
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EIC7179-5
SOURCE
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