EIC7785-10
UPDATED
04/12/2006
7.70-8.50 GHz 10-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised April 2006
YYWW
.827.010
.421
.004
.669
.105.008
.168.010
ALL DIMENSIONS IN INCHES
.125
.508.008
.442
SN
.004
.063
.024
.120 MIN
Excelics
.120 MIN
FEATURES
7.70
8.50GHz
Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
28% Power Added Efficiency
-46 dBc IM3 at PO = 29.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 7.70-8.50GHz
V
DS
= 10 V, I
DSQ
3200mA
39.5 40.5 dBm
G
1dB
Gain at 1dB Compression f = 7.70-8.50GHz
V
DS
= 10 V, I
DSQ
3200mA
7.5 8.5 dB
G
Gain Flatness f = 7.70-8.50GHz
V
DS
= 10 V, I
DSQ
3200mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
3200mA f = 7.70-8.50GHz
28 %
Id
1dB
Drain Current at 1dB Compression f = 7.70-8.50GHz
3300
3700
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 8.50GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
5700
7100
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 57 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
2.5
3.0
o
C/W
Note: 1) Tested with 50 Ohm gate resistor.
2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
15
10V
Vgs
Gate-Source Voltage
-5
-4V
Igsf
Forward Gate Current
104.4mA
34.8mA
Igsr
Reserve Gate Current
-17.4mA
-5.8mA
Pin
Input Power
39.5dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65 to +175
o
C
-65 to +175
o
C
Pt
Total Power Dissipation
50W
50W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EIC7785-10
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