EIC7785-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
7.7-8.5 GHz 4-Watt Internally-Matched Power FET
FEATURES
7.7 8.5 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
34% Power Added Efficiency
-46 dBc IM3 at Po = 25.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EIC7785-4 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 7.7-8.5 GHz
V
DS
= 10 V, I
DSQ
1100mA
35.5 36.5
dBm
G
1dB
Gain at 1dB Compression
f = 7.7-8.5 GHz
V
DS
= 10 V, I
DSQ
1100mA
7.5 8.5 dB
G
Gain Flatness f = 7.7-8.5 GHz
V
DS
= 10 V, I
DSQ
1100mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
1100mA
f = 7.7-8.5 GHz
34 %
Id
1dB
Drain Current at 1dB Compression
f = 7.7-8.5 GHz
1100
1300
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS f = 8.5 GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
2000
2500
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 20 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
5.5
6.0
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
EIC7785-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
7.5
7.8
8.1
8.4
8.7
Frequency (GHz)
S21 and S12
-30
-20
-10
0
10
20
S
2
1 and
S
12 (
d
B
)
DB(|S[2,1]|)
EIC7785-4
DB(|S[1,2]|)
EIC7785-4
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
40 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
21 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
1100mA
0
1.
0
1.
0
-1.
0
10
.0
10.0
-1
0.
0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.
0
-4
.0
0.
2
0.
2
-0.
2
0.
4
0.
4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11 and S22
Swp Max
8.7GHz
Swp Min
7.5GHz
S[1,1]
EIC7785-4
S[2,2]
EIC7785-4
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
7.5 0.6034
-149.14
2.6409
-81.54 0.0862 -138.31 0.5314 32.49
7.6
0.5516
-159.75
2.7534
-93.4
0.0948
-149.69
0.5287
20.36
7.7 0.4935 -172.49 2.8842 -105.71 0.1006 -161.26 0.5183 7.57
7.8
0.4264
173.09
2.9901
-118.6
0.1076
-174.38
0.5005
-6.22
7.9 0.3594 156.04 3.0911 -132.17 0.1154 172.85 0.4752 -21.19
8
0.29
135.54
3.152
-146.09
0.1203
159.84
0.4444
-37.73
8.1 0.2323 109.56 3.1785 -159.96 0.1233 146.34 0.4117 -56.07
8.2
0.1942
77.04
3.1614
-174.31
0.1262
132.54
0.3812
-75.72
8.3 0.1858
42.24 3.0973
171.66
0.1277 118.21 0.3633 -96.19
8.4
0.2013
9.94
3.0181
157.94
0.1256
105.29
0.3511
-117.08
8.5 0.2311
-14.73
2.9014
144.33
0.1242 92.6 0.3517
-137.38
8.6
0.2635
-35.41
2.7724
131.4
0.1232
79.73
0.3594
-155.44
8.7 0.2953
-51.98
2.6626
119.31
0.1178 66.75 0.3726 -171.45
EIC7785-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
3
6
9
12
15
18
21
24
0
25
50
75
100
125
150
Case Temperature (C)
T
o
tal
P
o
w
e
r
D
i
s
s
i
pat
i
on (
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C.L
.]
(
d
B
m
)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 1100 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
33
34
35
36
37
38
7.6
7.8
8.0
8.2
8.4
8.6
Frequency (GHz)
P
-
1dB
(
d
B
m
)
7
8
9
10
11
12
G
-
1dB
(
d
B
)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 8.50 GHz, f2 = 8.51 GHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
20
21 22
23 24
25 26
27 28
29 30
31 32
33
Pout [S.C.L.] (dBm)
IM
3
(d
B
c
)
IM3 (dBc)
EIC7785-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
SN
Excelics
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EIC7785-4 Industrial 7.7-8.5
GHz 35.5
-43
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EIC7785-4
SOURCE
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