ChipFind - документация

Электронный компонент: EIC7785-8

Скачать:  PDF   ZIP
EIC7785-8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
7.70-8.50 GHz 8-Watt Internally-Matched Power FET
FEATURES
7.70 8.50 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
34% Power Added Efficiency
-46 dBc IM3 at Po = 28.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH


DESCRIPTION
The EIC7785-8 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 7.70-8.50GHz
V
DS
= 10 V, I
DSQ
2200mA
38.5 39.5
dBm
G
1dB
Gain at 1dB Compression f = 7.70-8.50GHz
V
DS
= 10 V, I
DSQ
2200mA
7.5 8.5 dB
G
Gain Flatness f = 7.70-8.50GHz
V
DS
= 10 V, I
DSQ
2200mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
2200mA f = 7.70-8.50GHz
34 %
Id
1dB
Drain Current at 1dB Compression f = 7.70-8.50GHz
2200
2600
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS f = 8.50 GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
4000
4500
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 40 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
3.5
4.0
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.






EIC7785-8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
7.5
7.8
8.1
8.4
8.7
Frequency (GHz)
S21 and S12
-20
-10
0
10
20
S
21 and
S
12 (
d
B
)
DB(|S[2,1]|)
EIC7785-8
DB(|S[1,2]|)
EIC7785-8
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
80 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
32 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA

Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
2200mA
0
1.0
1.0
-1.0
10.0
10.0
-1
0.0
5.0
5.0
-5
.0
2.0
2.
0
-2
.0
3.0
3.
0
-3
.0
4.0
4.
0
-4
.0
0.2
0.
2
-0.
2
0.4
0.
4
-0
.4
0.6
0.
6
-0
.6
0.8
0
.
8
-
0
.8
S11 and S22
Swp Max
8.7GHz
Swp Min
7.5GHz
S[1,1]
EIC7785-8
S[2,2]
EIC7785-8
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
7.5 0.5659
-169.06
2.653 -99.16 0.1125 -153.47 0.5992 27.25
7.6
0.5159
177.44
2.7741
-111.83
0.1208
-165.72
0.5788
16.12
7.7 0.4615
161.8 2.9098
-125.33 0.127 -178.82 0.5468 4.26
7.8
0.3953
143.64
3.0355
-139.33
0.1344
167.39
0.5069
-8.19
7.9 0.3292 123.15 3.1442 -153.81 0.1405 153.05 0.4486 -22.61
8
0.2633
96.94
3.2247
-169.11
0.1461
138.07
0.3863
-39.28
8.1 0.2092
62.41 3.2539
174.99
0.1485 122.37 0.3151 -59.64
8.2
0.1858
17.93
3.2534
158.73
0.1502
107.25
0.2486
-87.21
8.3
0.2058
-25.56
3.1658
142.39
0.1484
91.76
0.2147
-122.78
8.4
0.2616
-60.84
3.0487
126.26
0.143
76.38
0.2226
-161.62
8.5
0.3184
-87.64
2.8796
110.62
0.1378
60.95
0.27
167.25
8.6
0.3806
-108.87
2.6767
95.4
0.1301
46.15
0.3349
145.24
8.7
0.4359
-127.56
2.4875
81.13
0.1224
30.86
0.3959
128.51
EIC7785-8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003

Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
4
8
12
16
20
24
28
32
36
0
25
50
75
100
125
150
Case Temperature (C)
T
o
tal
P
o
w
e
r
D
i
s
s
i
pa
ti
o
n
(
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C.L
.]
(
d
B
m
)
IM3

Typical Power Data (V
DS
= 10 V, I
DSQ
= 2200 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
36
37
38
39
40
41
7.6
7.8
8.0
8.2
8.4
8.6
Frequency (GHz)
P-
1
d
B (
d
Bm)
7
8
9
10
11
12
G
-
1dB
(
d
B
)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 8.50 GHz, f2 = 8.51 GHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
23
24
25
26
27
28
29
30
31
32
33
34
Pout [S.C.L.] (dBm)
IM
3
(
d
B
c
)
IM3 (dBc)













EIC7785-8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
SN
Excelics
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EIC7785-8 Industrial 7.7-8.5
GHz 38.5
-43
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.

EIC7785-8
SOURCE