EID1415-12
UPDATED
09/28/2004
14.40-15.35 GHz 12-Watt Internally-Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2004
FEATURES
14.40-15.35 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.0 dBm Output Power at 1dB Compression
5.5 dB Power Gain at 1dB Compression
23% Power Added Efficiency
-38 dBc IM3 at Po = 30.0 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EID1415-12 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL
PARAMETERS/TEST CONDITIONS
1
MIN TYP MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
3200mA
40.0 41.0 dBm
G
1dB
Gain at 1dB Compression f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
3200mA
4.5 5.5 dB
G
Gain Flatness f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
3200mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
3200mA f = 14.40-15.35GHz
23 %
Id
1dB
Drain Current at 1dB Compression f = 14.40-15.35GHz
3960
5100
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 30.0 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS f = 15.35GHz
-33
-38
*
dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
5900
8200
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 64 mA
-1.2
-2.5
V
R
TH
Thermal Resistance
3
2.5
3.5
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
*
These devices are available screened for IM3 performance. Please contact factory with your requirement.
EID1415-12
UPDATED
09/28/2004
14.40-15.35 GHz 12-Watt Internally-Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2004
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
220 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
35 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature -65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
3200mA
0
1.
0
-1
.0
1.
0
10
.0
-10.0
10.
0
5.
0
-5.0
5.0
2.
0
-2
.0
2.
0
3.
0
-3.
0
3.0
4.
0
-4.
0
4.0
0.
2
-0.
2
0.2
0.
4
-0
.4
0.
4
0.
6
-0
.6
0.
6
0.
8
-
0
.
8
0
.
8
0
1.
0
1.
0
-1.
0
10
.0
10.0
-1
0.
0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.
0
-4
.0
0.
2
0.2
-0.
2
0.
4
0.
4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0
.
8
-
0
.
8
S11 and S22
Swp Max
16.5GHz
Swp Min
13.5GHz
S[1,1] *
EID1415_12
S[2,2] *
EID1415_12
14
14.5
15
15.5
16
Frequency (GHz)
S21 and S12
-40
-20
0
20
S21 an
d
S
12 (
d
B
)
DB(|S[2,1]|) *
EID1415_12
DB(|S[1,2]|) *
EID1415_12
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
13.50 0.775 11.290 1.415 9.610 0.025 35.410 0.521 102.860
13.75
0.717
-5.020
1.579
-10.630
0.028
6.450
0.492
87.150
14.00 0.635 -23.800 1.786 -33.500 0.033 -21.300 0.453 69.220
14.25
0.524
-45.990
1.985
-58.350
0.039
-52.540
0.407
49.100
14.50 0.378 -72.060 2.140 -85.100 0.044 -86.110 0.346 25.420
14.75
0.229
-103.790
2.226
-112.700
0.047
-117.710
0.273
-3.070
15.00 0.106 -153.980 2.248 -140.510 0.051 -146.950 0.210 -37.440
15.25
0.085
102.660
2.199
-167.310
0.050
-178.820
0.171
-80.600
15.50 0.151 47.090 2.140 166.000 0.046 150.110 0.183 -129.030
15.75
0.200
10.580
2.054
139.280
0.043
117.830
0.232
-169.440
16.00 0.222 -23.750 1.955 112.660 0.039 77.460 0.303 160.700
EID1415-12
UPDATED
09/28/2004
14.40-15.35 GHz 12-Watt Internally-Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2004
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
Case Temperature (C)
T
o
t
a
l
P
o
w
e
r
D
i
s
s
i
pat
i
on (
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C
.L
.]
(
d
B
m
)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 3200 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
37
38
39
40
41
42
43
14.4
14.6
14.8
15.0
15.2
15.4
Frequency (GHz)
P-1
d
B
(d
Bm
)
4
5
6
7
8
9
10
G
-
1
d
B (d
B)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 15.35 GHz, f2 = 15.34 GHz
-60
-55
-50
-45
-40
-35
-30
-25
20
21 22
23 24
25 26
27 28
29 30
31 32
33
Pout [S.C.L.] (dBm)
IM
3
(
d
B
c
)
IM3 (dBc)
EID1415-12
UPDATED
09/28/2004
14.40-15.35 GHz 12-Watt Internally-Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2004
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
SN
Excelics
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EID1415-12 Industrial
14.40-15.35
GHz 40.0
-33
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EID1415-12
SOURCE
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