EID1415-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised April 2004
14.40-15.35 GHz 5-Watt Internally-Matched Power FET
Issued Date: 04-27-04
FEATURES
14.40-15.35
GHz
Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-38 dBc IM3 at Po = 26.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EID1415-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
1200mA
37.0 37.5
dBm
G
1dB
Gain at 1dB Compression f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
1200mA
6.5 7.5 dB
G
Gain Flatness f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
1200mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
1200mA f = 14.40-15.35GHz
35 %
Id
1dB
Drain Current at 1dB Compression f = 14.40-15.35GHz
1400
1800
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 15.35GHz
-33 -38
*
dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
2080
2880
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 20 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
4.5
5.5
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
*
These devices are available screened for IM3 performance.
Please contact factory with your requirement.
EID1415-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised April 2004
Issued Date: 04-27-04
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
40 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
23 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
1200mA
0
1.0
-1
.0
1.0
10.0
-10.0
10
.0
5.0
-5.0
5.0
2.0
-2
.0
2.
0
3.0
-3.
0
3.0
4.0
-4.0
4.0
0.2
-0.
2
0.2
0.4
-0
.4
0.
4
0.6
-0
.6
0.
6
0.8
-
0
.
8
0
.
8
0
1.0
1.
0
-1.0
10.0
10.0
-1
0.
0
5.0
5.0
-5
.0
2.0
2.
0
-2
.0
3.0
3.
0
-3
.0
4.0
4.0
-4.
0
0.2
0.
2
-0.
2
0.4
0.
4
-0
.4
0.6
0.
6
-0
.6
0.8
0
.
8
-
0
.
8
S11 and S22
Swp Max
16GHz
Swp Min
14GHz
S[1,1] *
EID1415-5
S[2,2] *
EID1415-5
14
14.5
15
15.5
16
Frequency (GHz)
S21 and S12
-30
-20
-10
0
10
20
S
2
1 and S
1
2 (
d
B
)
DB(|S[2,1]|) *
EID1415-5
DB(|S[1,2]|) *
EID1415-5
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
14.00 0.486 -82.890 2.134 -168.830 0.053 -178.670 0.469 -164.400
14.20
0.438
-93.780
2.225
177.610
0.054
167.150
0.410
-177.270
14.40 0.369
-106.050
2.312 163.060 0.060 151.050 0.343 167.160
14.60
0.285
-119.390
2.380
147.370
0.062
136.610
0.277
144.230
14.80 0.188
-137.440
2.417 131.260 0.065 120.170 0.238 113.450
15.00
0.088
-167.830
2.417
114.830
0.064
102.290
0.249
79.350
15.20 0.061 87.400 2.375 98.420 0.066 87.850 0.290 52.140
15.40
0.151
41.970
2.306
82.120
0.061
69.710
0.340
32.490
15.60 0.245 22.850 2.200 66.090 0.061 55.880 0.383 17.290
15.80
0.322
8.370
2.087
50.830
0.060
40.490
0.411
4.630
16.00 0.389 -3.480 1.973 36.210 0.056 25.780 0.424 -7.330
EID1415-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised April 2004
Issued Date: 04-27-04
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
0
25
50
75
100
125
150
Case Temperature (C)
T
o
tal
P
o
w
e
r
D
i
s
s
i
pati
on (
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
out [S
.C
.L.]
(dB
m
)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 1200 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
34
35
36
37
38
39
40
14.2
14.4
14.6
14.8
15.0
15.2
15.4
15.6
Frequency (GHz)
P-
1
d
B (
d
Bm
)
5
6
7
8
9
10
11
G
-
1dB
(
d
B
)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 14.50 GHz, f2 = 14.51 GHz
-55
-50
-45
-40
-35
-30
-25
-20
-15
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Pout [S.C.L.] (dBm)
IM
3
(
d
B
c
)
IM3 (dBc)
EID1415-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised April 2004
Issued Date: 04-27-04
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
Excelics
SN
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EID1415-5 Industrial
14.40-15.35 GHz
37.0
-33
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EID1415-5
SOURCE
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