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Электронный компонент: EID1516-12

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EID1516-12
ISSUED
08/04/2005
15.7-16.3 GHz 12-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised August 2005
SN
Excelics
YYWW
FEATURES
15.7-16.3 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.0 dBm Output Power at 1dB Compression
5.5 dB Power Gain at 1dB Compression
24% Power Added Efficiency
-38 dBc IM3 at Po = 30.0 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EID1516-12 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 15.7-16.3GHz
V
DS
= 10 V, I
DSQ
3200mA
40.0 41.0 dBm
G
1dB
Gain at 1dB Compression f = 15.7-16.3GHz
V
DS
= 10 V, I
DSQ
3200mA
4.5 5.5 dB
G
Gain Flatness f = 15.7-16.3GHz
V
DS
= 10 V, I
DSQ
3200mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
3200mA f = 15.7-16.3GHz
24 %
Id
1dB
Drain Current at 1dB Compression f = 15.7-16.3GHz
3800
4300
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 30.0 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS f = 16.3GHz
-33 -38
dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
6400
8000
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 64 mA
-1.2
-2.5
V
R
TH
Thermal Resistance
3
2.5
2.9
o
C/W
Note: 1) Tested with 50 Ohm gate resistor. 2) S.C.L = Single Carrier Level. 3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain Current
IDSS
I
GSF
Forward Gate Current
220 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
52 W
T
CH
Channel Temperature
175C
T
STG
Storage Temperature -65/+175C
Notes: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EID1516-12