EID8596-12
UPDATED
11/11/2004
8.50 9.60 GHz 12-Watt Internally-Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004
FEATURES
8.50 9.60 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.5 dBm Output Power at 1dB Compression
9.0 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-38 dBc IM3 at Po = 30.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EID8596-12 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 8.50-9.60GHz
V
DS
= 10 V, I
DSQ
3600mA
40.5 41.5
dBm
G
1dB
Gain at 1dB Compression f = 8.50-9.60GHz
V
DS
= 10 V, I
DSQ
3600mA
8.0 9.0 dB
G
Gain Flatness f = 8.50-9.60GHz
V
DS
= 10 V, I
DSQ
3600mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
3600mA f = 8.50-9.60GHz
35 %
Id
1dB
Drain Current at 1dB Compression f = 8.50-9.60GHz
4000
4600
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 30.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS f = 9.60 GHz
-33 -38* dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
6500
7500
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 60 mA
-1.2
-2.5
V
R
TH
Thermal Resistance
3
2.5
3.0
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
*
These devices are available screened for IM3 performance. Please contact factory with your requirement.
EID8596-12
UPDATED
11/11/2004
8.50 9.60 GHz 12-Watt Internally-Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-3.0 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
120 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
42 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
3600mA
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
8.00 0.665 13.310 3.042 -101.000 0.043 -143.450 0.386 175.740
8.25
0.628
-10.290
3.060
-126.890
0.048
-171.390
0.383
144.740
8.50 0.575
-33.260
3.064
-151.970 0.051 165.500 0.405 116.280
8.75
0.506
-58.660
3.146
-177.830
0.056
139.920
0.430
91.480
9.00 0.426
-88.220
3.230
154.710 0.060 114.480 0.437 68.710
9.25
0.343
-124.370
3.263
126.660
0.063
87.140
0.410
45.740
9.50 0.273 -168.710 3.280 97.610 0.065 59.430 0.373 21.620
9.75
0.235
139.600
3.232
67.230
0.066
28.560
0.309
-5.450
10.00 0.223 86.780 3.140 36.090 0.066 -1.380 0.235 -41.240
10.25
0.200
27.440
3.023
3.490
0.066
-36.490
0.210
-95.270
10.50 0.209 -47.720 2.818 -30.940 0.063 -72.920 0.291 -146.970
0
1.0
-
1.0
1.
0
10.
0
-10.0
10.
0
5.0
-5.0
5.0
2.0
-2
.0
2.
0
3.0
-3.
0
3.0
4.0
-4.0
4.0
0.2
-0.
2
0.2
0.4
-0
.4
0.
4
0.6
-0
.6
0.
6
0.8
-
0
.
8
0
.
8
0
1.
0
1.0
-1.
0
1
0.0
10.0
-1
0.
0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.0
-4
.0
0.
2
0.
2
-0.
2
0.
4
0.
4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0
.
8
-
0
.
8
S11 and S22
Swp Max
10GHz
Swp Min
8GHz
S[1,1] *
EID8596-12
S[2,2] *
EID8596-12
8
8.5
9
9.5
10
Frequency (GHz)
S21 and S12
-30
-20
-10
0
10
20
S
21 and
S
12 (dB
)
DB(|S[2,1]|) *
EID8596-12
DB(|S[1,2]|) *
EID8596-12
EID8596-12
UPDATED
11/11/2004
8.50 9.60 GHz 12-Watt Internally-Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
6
12
18
24
30
36
42
48
0
25
50
75
100
125
150
Case Temperature (C)
T
o
t
a
l
P
o
we
r
Di
s
s
i
p
a
t
i
o
n
(
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C.L
.]
(
d
B
m
)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 3600 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
36
37
38
39
40
41
42
43
8.4
8.6
8.8
9.0
9.2
9.4
9.6
9.8
Frequency (GHz)
P-
1
d
B (
d
Bm)
9
10
11
12
13
14
G
-
1dB
(
d
B
)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 9.60 GHz, f2 = 9.59 GHz
-70
-60
-50
-40
-30
-20
12
14 16
18 20
22 24
26 28
30 32
34 36
38
Pout [S.C.L.] (dBm)
IM
3
(
d
B
c
)
IM3 (dBc)
EID8596-12
UPDATED
11/11/2004
8.50 9.60 GHz 12-Watt Internally-Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
SN
Excelics
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EID8596-12 Industrial
8.50-9.60
GHz 40.5
-33
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EID8596-12
SOURCE
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