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Электронный компонент: EMP103

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EMP103
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2004
ISSUED DATE: 07-12-04
6.4 8.0 GHz Power Amplifier MMIC
Dimension: 2200um X 3000um
Thickness: 65um + 15um

FEATURES
6.4 8.0 GHz Operating Frequency Range
32.5dBm Output Power at 1dB Compression
15.0 dB Typical Small Signal Gain
-40dBc OIMD3 @Each Tone Pout 22dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C,
50 ohm, VDD=10V, IDQ=1000mA)
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
F
Operating Frequency Range
6.4
8.0
GHz
P1dB
Output Power at 1dB Gain Compression
31.5 32.5
dBm
Gss
Small Signal Gain
13.0
15.0
dB
OIMD3
Output 3
rd
Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 22dBm
-40.0 dBc
Input RL
Input Return Loss
-15
-10
dB
Output RL
Output Return Loss
-6
dB
Idss
Saturate Drain Current V
DS
=3V, V
GS
=0V
1680
mA
V
DD
Power Supply Voltage
10
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
7
o
C/W
Tb
Operating Base Plate Temperature
- 35
+ 80
C
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10V
V
GS
Gate to Source Voltage
-
4V
I
DD
Drain
Current
Idss
I
GSF
Forward Gate Current
35 mA
P
IN
Input Power
@ 3dB compression
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/150C
P
T
Total
Power
Dissipation
17W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
T
HS
)/R
TH
; where T
HS
= ambient temperature
EMP103
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2004
ISSUED DATE: 07-12-04
6.4 8.0 GHz Power Amplifier MMIC
ASSEMBLY DRAWING
CHIP OUTLINE


TYPICAL
PERFORMANCE
5
6
7
8
9
Frequency (GHz)
Small Signal Performance
-20
-15
-10
-5
0
5
10
15
20
dB[S21]
dB[S11]
dB[S22]
Data
measured
@
Vd=10V,
Id=950mA

All Dimensions in Microns
P1dB performance
30
30.5
31
31.5
32
32.5
33
33.5
34
34.5
35
5
6
7
8
9
Frequency (GHz)
dB
m