EMP112-P1
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2004
ISSUED DATE: 07-01-04
5.0 7.2 GHz Power Amplifier MMIC
Optional Packaging solutions are available
contact the Excelics sales team for details.
FEATURES
5.0 7.2 GHz Operating Frequency Range
29.5dBm Output Power at 1dB Compression
21.0 dB Typical Small Signal Gain
-40dBc OIMD3 @Each Tone Pout 19dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C,
50 ohm, VDD=7V, IDQ= 800 mA)
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
F
Operating Frequency Range
5.0
7.2
GHz
P1dB
Output Power at 1dB Gain Compression
28.0
29.5
dBm
Gss
Small Signal Gain
18.0
21.0
dB
OIMD3
Output 3
rd
Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 19dBm
-40 dBc
Input RL
Input Return Loss
-14
dB
Output RL
Output Return Loss
-6
dB
Idss
Saturate Drain Current V
DS
=3V, V
GS
=0V 992
1240
1488
mA
V
DD
Power Supply Voltage
7
8
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
7.5
o
C/W
Tb
Operating Base Plate Temperature
-
35 +
85 C
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
8 V
V
GS
Gate to Source Voltage
-
4 V
I
DD
Drain
Current
Idss
I
GSF
Forward Gate Current
18 mA
P
IN
Input Power
@ 3dB compression
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/150C
P
T
Total
Power
Dissipation
15.2W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
T
HS
)/R
TH
; where T
HS
= ambient temperature
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