EMP201
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
17.5 21.0 GHz Power Ammplifier MMIC
Issued Date: 12-18-03
FEATURES
17.5 21.0 GHz Bandwidth
24.5dBm Output Power at 1dB Compression
18.0 dB Typical Power Gain
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 2250um X 1000um
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
F
Operating Frequency Range
17.5
21.0
GHz
P
1dB
Output Power at 1dB Compression
V
DS
= 8 V, I
DSQ
1/2 I
DSS
23.5 24.5 dBm
Gss
Small Signal Gain
16
18
dB
IP3
Third Order Interception Point
31
dBm
Input RL
Input Return Loss
8
10
dB
Output RL
Output Return Loss
6
8
dB
Idd
Power Supply Current
150
210
mA
Vdd
Power Supply Voltage
7
8
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
50
o
C/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
8 V
V
GS
Gate to Source Voltage
-3 V
I
DD
Drain
Current
300mA
I
GSF
Forward Gate Current
8mA
P
IN
Input Power
@ 3dB compression
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/150C
P
T
Total
Power
Dissipation
3.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
T
HS
)/R
TH
;
where T
HS
= ambient temperature
EMP201
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
16
.
5
17
.
0
17
.
5
18
.
0
18
.
5
19
.
0
19
.
5
20
.
0
20
.
5
21
.
0
21
.
5
22
.
0
22
.
5
16
.
0
23
.
0
-25
-20
-15
-10
-5
0
5
10
15
20
-30
25
freq, GHz
17.5 21.0 GHz Power Ammplifier MMIC
Issued Date: 12-18-03
Typical Performance:
1. P-1 and G-1
P201 P-1 & G-1
at 8V, 160mA
17
19
21
23
25
27
17
18
19
20
21
22
Frequency (GHz)
P-1 (dBm)
G-1 (dB)
2. Linear Gain and Return Loss Versus Frequency
S21
S22
S11
EMP201
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
17.5 21.0 GHz Power Ammplifier MMIC
Issued Date: 12-18-03
ASSEMBLY DRAWING
The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50
ohm line and separate the wires to minimize the mutual inductance.
CHIP OUTLINE
Chip Size 1000 x 2250 microns
Chip Thickness: 75
13 microns
PAD Dimensions: 100 x 100 microns
All Dimensions in Microns
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