EMP312
Specifications are subject to change without notice.
ISSUED DATE: 09-10-04
21.0 24.0 GHz Power Amplifier MMIC
Dimension: 2140um X 2650um
Thickness: 75um 13um
FEATURES
21.0 24.0 GHz Operating Frequency Range
28.5dBm Output Power at 1dB Compression
13.0 dB Typical Small Signal Gain
-40dBc OIMD3 @Each Tone Pout 18.5dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C,
50 ohm, VDD=7V, IDQ=760mA)
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
F
Operating Frequency Range
21.0
24.0
GHz
P1dB
Output Power at 1dB Gain Compression
27.0 28.5
dBm
Gss
Small Signal Gain
10.0
13.0
dB
OIMD3
Output 3
rd
Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 18.5dBm
-40 -37 dBc
Input RL
Input Return Loss
-15
-10
dB
Output RL
Output Return Loss
-15
-10
dB
Idss
Saturate Drain Current V
DS
=3V, V
GS
=0V 858
1072
1288
mA
V
DD
Power Supply Voltage
7
8
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
8
o
C/W
Tb
Operating Base Plate Temperature
-35
+85
C
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
8 V
V
GS
Gate to Source Voltage
-4 V
I
DD
Drain Current
Idss
I
GSF
Forward Gate Current
15mA
P
IN
Input Power
@ 3dB compression
T
CH
Channel Temperature
150C
T
STG
Storage Temperature
-65/150C
P
T
Total Power Dissipation
12.6W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
T
HS
)/R
TH
; where T
HS
= ambient temperature
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised September 2004
EMP312
Specifications are subject to change without notice.
PRELIMINARY DATA SHEET 21.0 24.0 GHz Power Amplifier MMIC
ASSEMBLY DRAWING
The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line
and separate the wires to minimize the mutual inductance.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised September 2004
CHIP OUTLINE
Chip size 2140 X 2650 microns
Chip Thickness: 75
13 microns
PAD Dimensions: 100 x 100 microns
All Dimensions in Microns
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