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Электронный компонент: EMR101_C

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EMR101_C
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
DC 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC
FEATURES
Broadband Performance: DC-26GHz
Wide Attenuation Range: 25dB
Low Insertion Loss: 2.5dB
Good Return Loss: 10dB
APPLICATIONS
Point-to-point and point-to-multipoint radio

ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency Range
DC
26
GHz
Input Power at 1dB Compression
6
8
dBm
Input Power at 0.25dB Compression
-5
-2
dBm
(DC - 8GHz)
1.5
2.5
dB
Minimum Attenuation
(8 - 26GHz)
2.5
3.5
dB
(DC 8GHz)
25
30
dB
Maximum Attenuation
(8 - 26GHz)
30
35
dB
@min. attenuation
10
15
dB
Return Loss
@max. attenuation
10
12
dB
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
RF Input Power
+16dBm
Control Voltage
+1.0 to -8 Volts
Storage Temperature
-65 to 150 deg C
Operating Temperature
-55 to +125 deg C
1.
Operating the device beyond any of the above rating may result in permanent damage.













EMR101_C
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
5
10
15
20
25
0
30
-30
-20
-10
-40
0
freq, GHz
5
10
15
20
25
0
30
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-4.0
0.0
freq, GHz
5
10
15
20
25
0
30
-32
-30
-28
-34
-26
freq, GHz
Atten
u
a
tion
(dB)
Atten
u
a
tion
(dB)
Return
L
o
ss
(d
B)
5
10
15
20
25
0
30
-25
-20
-15
-30
-10
freq, GHz
Atten
u
a
tion
(dB)
0
5
10
15
20
25
30
0
0. 5
1
1. 5
2
2. 5
Cont r ol Vol t age, - V
A
t
t
e
n
uat
i
on,
dB
5
10
15
20
25
0
30
-100
0
100
-200
200
freq, GHz
Relativ
e Ph
ase (DEG)
DC 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC

INSERTION LOSS ATTENUATION RANGE






RETURN LOSS RELATIVE ATTENUATION
Min. Attenuation
Max. Attenuation




RELATIVE ATTENUATION VS.
CONTROL VOLTAGE @2GHz RELATIVE PHASE

3dB
18dB
30dB


EMR101_C
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
DC 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC


Input Power at 1dB and 0.25dB Compression VS. Attenuation
- 5
0
5
10
15
20
0
2
4
6
8
10
12
At t enuat i on, dB
I
nput
P
o
w
e
r
,
dB
m
Pi n- 0. 25
Pi n- 1


Pout and Attenuation VS. Pin at High Attenuation Setting
- 30
- 25
- 20
- 15
- 10
- 5
0
- 10
- 5
0
5
10
15
Pi n, dBm
A
t
t
enu
at
i
o
n
,
dB
At t enuat i on
Pout






EMR101_C
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
DC 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC
Outline Drawing
External Op-amp Driver
V1
V2
RFIN
RFOUT
R
R1
R=50 Ohm
R
R2
R=50 Ohm
R
R9
R=500 Ohm
R
R10
R=500 Ohm
R
R8
FET
Shunt1
FET
OUT1
R
R6
FET
IN1
R
R7
R
R4
R
R3
R
R5
FET
Shunt
FET
OUT
FET
IN










External op-amp control circuit
works with on chip reference
circuit to maintain impedance
match while attenuation is varied.
Input control voltage ranges from
0V (max. attenuation) to -4V
(min. attenuation).
All dimensions in microns
Bond pads are 100microns by 100microns
Die thickness is 75
13
microns
Backside metallization: GOLD
Bond pads metallization: GOLD