EPA030D
UPDATED
11/30/2004
High Performance Heterojunction Dual-Gate FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2004
Chip Thickness: 75 13 microns
All Dimensions In Microns
FEATURES
+18.0 dBm OUTPUT POWER AT 1dB COMPRESSION
19.5 dB POWER GAIN AT 12GHz
0.3 x 300 MICRON RECESSED "MUSHROOM" DUAL GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
EXTRA HIGH PERFORMANCE AND HIGH RELIABILITY
MIXER, SWITCH, AGC AND TEMPERATURE
COMPENSATION APPLICATIONS
Idss SORTED IN 5mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression
V
DS
= 6V, I
DS
50% I
DSS,
V
G2S =
0V f = 12GHz
15.0 18.0
dBm
G
1dB
Gain at 1dB Compression
V
DS
= 6V, I
DS
50% I
DSS,
V
G2S =
0V f = 12GHz
17.5 19.5
dB
NF
Noise Figure
V
DS
= 3V, I
DS
15mA
,
V
G2S =
0V f = 12GHz
1.2
dB
Ga
Associated Gain
V
DS
= 3V, I
DS
15mA
,
V
G2S =
0V f = 12GHz
17.5
dB
I
DSS
Saturated Drain Current V
DS
= 3V, V
G1S
= V
G2S
= 0 V
30
80
115
mA
G
M
Transconductance V
DS
= 3V, V
G1S
= -0.5V
,
V
G2S
= 0 V
40
70
mS
V
P1
Pinch-off Voltage V
DS
= 3V, I
DS
= 1.0mA
,
V
G2S
= 0 V
-1.5
-3.5
V
V
P2
Pinch-off Voltage V
DS
= 3V, I
DS
= 1.0mA
,
V
G1S
= 0 V
-1.5
-3.5
V
BV
G2D
Gate 2 to Drain Breakdown Voltage
I
G2D
= 1.0mA
,
Gate 1 Open
-10 -14
V
BV
G1S
Gate 1 to Source Breakdown Voltage
I
G1S
= 1.0mA
,
Gate 2 Open
-6 -12
V
R
TH
Thermal
Resistance
125
o
C/W
EPA030D
UPDATED
11/30/2004
High Performance Heterojunction Dual-Gate FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2004
MAXIMUM RATINGS AT 25
O
C
SYMBOL PARAMETERS
ABSOLUTE
1
CONTINUOURS
2
V
DS
Drain to Source Voltage
10 V
7 V
V
GS
Gate to Source Voltage
-6 V
-3.5 V
I
DS
Drain
Current
Idss
Idss
I
GSF
Forward Gate Current
15 mA
2.5 mA
P
IN
Input Power
15 dBm
@ 3dB compression
P
T
Total Power Dissipation
1.1 W
900 mW
T
CH
Channel
Temperature
175C
150C
T
STG
Storage
Temperature
-65/+175C
-65/+150C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
S-PARAMETERS
6V, 1/2 Idss, Vg2s=0V
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1 0.991 -15.1 9.329 165.6 0.006 80.8 0.943
-5.5
21 0.758 144.0 4.807 -38.8 0.014 65.7 1.161 -107.6
2 0.965 -30.1 9.120 152.7 0.010 74.8 0.932 -11.2
22 0.786 138.7 4.797 -49.7 0.019 65.4 1.233 -114.5
3 0.937 -45.3 8.850 139.8 0.015 62.0 0.912 -16.4
23 0.809 134.2 4.809 -61.7 0.024 80.1 1.339 -122.8
4 0.897 -59.8 8.553 127.4 0.019 55.7 0.891 -21.6
24 0.838 130.0 4.793 -75.3 0.029 82.1 1.437 -133.4
5 0.854 -74.1 8.208 115.3 0.021 47.7 0.868 -26.5
25 0.875 126.4 4.749 -90.2 0.038 83.2 1.520 -144.3
6 0.818 -86.2 7.758 104.8 0.022 43.8 0.854 -30.7
26 0.907 123.2 4.604 -106.9 0.049 77.8 1.664 -158.3
7 0.786 -97.4 7.369 94.9 0.024 37.6 0.840 -34.5
27 0.932 119.3 4.423 -125.2 0.061 71.4 1.720 -173.9
8
0.753 -109.1 7.016 84.8 0.024 31.8 0.828 -38.7
28 0.960 114.9 4.008 -144.6 0.067 62.3 1.688 171.4
9
0.726 -119.9 6.697 75.2 0.024 26.7 0.817 -42.8
29 0.968 111.1 3.527 -163.4 0.071 53.8 1.638 158.6
10 0.699 -130.5 6.409 65.5 0.021 24.0 0.814 -47.2
30 0.952 107.2 3.016 179.0 0.072 45.5 1.555 147.2
11 0.688 -141.1 6.173 56.1 0.020 16.5 0.820 -52.1
31 0.947 103.2 2.587 162.1 0.072 39.9 1.433 137.9
12 0.687 -150.3 5.952 46.6 0.019 11.4 0.823 -58.0
32 0.944
99.6 2.198 145.5 0.074 35.2 1.317 129.4
13 0.684 -160.2 5.720 36.8 0.019 6.6 0.840 -64.0
33 0.951
95.6 1.920 129.5 0.077 32.7 1.227 123.7
14 0.687 -169.4 5.499 27.0 0.015 4.7 0.860 -70.1
34 0.942
92.4 1.619 114.1 0.073 24.8 1.123 117.7
15 0.688 -176.6 5.298 18.1 0.013 15.1 0.879 -76.8
35 0.959
87.8 1.412
98.9 0.075 19.7 1.033 113.6
16 0.715 176.6 5.189 8.0 0.012 13.4 0.923 -82.9
36 0.968
83.2 1.235
85.2 0.076 10.5 0.966 111.9
17 0.731 169.4 4.994 -2.0 0.012 14.7 0.960 -89.6
37 0.976
79.3 1.067
72.1 0.076 2.2 0.893 109.9
18 0.745 163.5 4.850 -11.6 0.012 20.0 0.995 -95.5
38 0.989
76.4 0.936
61.0 0.069 -6.3 0.851 109.1
19 0.774 156.6 4.705 -21.7 0.011 35.6 1.025 -101.1
39 0.985
72.6 0.829
49.0 0.066 -15.8 0.803 108.9
20 0.764 151.0 4.571 -31.0 0.012 42.3 1.093 -106.3
40 0.991
71.5 0.714
38.8 0.056 -21.3 0.785 108.4
Note:
The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each., 2 gate2 wires(to ground), 7 mils each
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