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Электронный компонент: EPA040A-70

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EPA040A-70
UPDATED
11/22/2004
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004



FEATURES
NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE
+25.5 dBm OUTPUT POWER AT 1dB COMPRESSION
7.0 dB POWER GAIN AT 12GHz
0.3 x 800 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVICES EXTRA HIGH POWER EFFICIENCY AND
HIGH RELIABILITY


ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
21.5 23.5
P
1dB
Output Power at 1dB Compression f = 12GHz
V
DS
= 6V, I
DS
50% I
DSS
f = 18GHz
23.5
dBm
9.0 10.5
G
1dB
Gain at 1dB Compression f = 12GHz
V
DS
= 6V, I
DS
50% I
DSS
f = 18GHz
7.0
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 6V, I
DS
50% I
DSS
f = 12GHz
45
%
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
70
120
160
mA
G
M
Transconductance
V
DS
= 3 V, V
GS
= 0 V
80
130
mS
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 1.0 mA
-1.0
-2.5
V
BV
GD
Drain Breakdown Voltage
I
GD
= 1.0mA
-9
-15
V
BV
GS
Source Breakdown Voltage
I
GS
= 1.0mA
-6
-14
V
R
TH
Thermal
Resistance
250*
o
C/W
Notes:
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOL PARAMETERS
ABSOLUTE
1
CONTINUOURS
2
V
DS
Drain to Source Voltage
10 V
6 V
V
GS
Gate to Source Voltage
-6 V
-3 V
I
DS
Drain Current
Idss
75 mA
I
GSF
Forward Gate Current
20 mA
3 mA
P
IN
Input Power
20 dBm
@ 3dB compression
P
T
Total
Power
Dissipation
550mW
455mW
T
CH
Channel
Temperature
175C
150C
T
STG
Storage
Temperature
-65/+175C
-65/+150C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EPA040A-70
UPDATED
11/22/2004
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004

S-PARAMETERS
6V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.948 -35.2 9.101 150.6
0.021 70.0 0.643
-17.1
2.0 0.846 -66.9 7.892 124.5
0.035 55.8 0.585
-33.4
3.0 0.753 -93.4 6.667 103.2
0.043 44.7 0.538
-46.2
4.0 0.676
-118.2 5.797 84.5 0.049 36.8 0.503
-55.8
5.0 0.620
-140.9 5.131 67.6 0.053 30.8 0.459
-65.0
6.0 0.584
-158.2 4.584 52.4 0.056 27.7 0.417
-77.2
7.0 0.552
-177.3 4.133 37.4 0.059 23.8 0.401
-88.6
8.0 0.527 165.1 3.768 23.5 0.060 21.8 0.370
-97.7
9.0 0.540 139.6 3.473 8.3 0.066 20.1 0.363
-107.1
10.0 0.567 119.0 3.201 -7.1 0.072 13.6 0.348
-122.4
11.0 0.573 105.6 3.058 -21.8 0.080 7.2 0.338
-143.5
12.0 0.596 89.7 2.916 -37.2 0.088 -0.9 0.344
-163.9
13.0 0.668 73.3 2.662 -52.4 0.092 -10.0 0.329
176.9
14.0 0.717 58.9 2.395 -66.9 0.094 -19.8 0.337
157.9
15.0 0.731 44.4 2.248 -83.7 0.097 -32.4 0.382
134.6
16.0 0.748 28.6 2.067 -101.6
0.095 -46.9 0.411
110.5
17.0 0.744 18.0 1.835 -114.4
0.093 -52.3 0.405
96.9
18.0 0.772 8.9 1.768 -127.1
0.101 -70.2 0.471
85.8
19.0 0.784 -7.3 1.597 -143.9
0.086 -85.7 0.503
68.2
20.0 0.809 -20.0 1.484 -160.4
0.081 -101.5 0.551
52.0
21.0 0.788 -29.3 1.401 -175.3
0.081 -116.7 0.549
38.9
22.0 0.747 -41.8 1.337 170.2
0.082 -133.9 0.538
29.7
23.0 0.762 -59.5 1.218 152.4
0.083 -153.9 0.515
10.7
24.0 0.772 -73.4 1.100 133.5
0.088 -173.7 0.502
-11.8
25.0 0.693 -89.6 1.067 116.8
0.103 169.3 0.529
-25.6
26.0 0.679 -111.5 1.065 98.2 0.130 151.4 0.500
-42.5