EPA160A
UPDATED
05/12/2006
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised June 2006
FEATURES
+31.0dBm TYPICAL OUTPUT POWER
8.5dB TYPICAL POWER GAIN AT 18GHz
0.3 X 1600 MICRON RECESSED "MUSHROOM"
GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 40mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
Chip Thickness: 75
13 microns
All Dimensions In Microns
Caustion! ESD sensitive device.
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression
f= 12GHz
Vds=8V, Ids=50% Idss
f= 18GHz
29.0 31.0
31.0
dBm
G
1dB
Gain at 1dB Compression
f= 12GHz
Vds=8V, Ids=50% Idss
f= 18GHz
9.5 11.5
8.5
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
45
%
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
280
480
680
mA
Gm
Transconductance Vds=3V,
Vgs=0V
320 500
mS
Vp
Pinch-off Voltage
Vds=3V,Ids=4.8mA
-1.0
-2.5
V
BVgd
Drain Breakdown Voltage
Igd=1.6mA
-13
-15
V
BVgs
Source Breakdown Voltage
Igs=1.6mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
30
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
10V 8V
Vgs
Gate-Source Voltage
-5V -3V
Igsf
Forward Gate Current
7.2 mA
2.4 mA
Igsr
Reverse Gate Current
-1.2 mA
-0.4 mA
Pin
Input Power
28 dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65/175
o
C -65/175
o
C
Pt
Total Power Dissipation
4.5 W
4.5 W
Note:
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EPA160A
UPDATED
05/12/2006
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised June 2006
P-1dB & PAE vs. Vds
24
26
28
30
32
34
36
38
40
4
5
6
7
8
Drain-Source Voltage (V)
P
-
1dB (d
Bm
)
10
15
20
25
30
35
40
45
50
PA
E (
%
)
f = 12 GHz
Ids = 50% Idss
Pout & PAE vs. Pin
0
10
20
30
40
50
-5
0
5
10
15
20
25
Pin (dBm)
P
o
u
t
(d
Bm
) o
r
PA
E
(%)
f = 12 GHz
Vds = 8V, Ids = 50% Idss
PAE
Pout
S-PARAMETERS
8V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.891 -118.3 14.073 114.9 0.028 32.7 0.344 -141.1
2.0 0.890 -146.2 7.912 96.6 0.031 22.3 0.385 -156.6
3.0 0.889 -157.7 5.382 86.8 0.031 20.5 0.401 -162.4
4.0 0.892 -163.6 4.093 79.3 0.032 19.1 0.416 -164.1
5.0 0.887 -167.5 3.275 73.1 0.031 21.8 0.431 -164.8
6.0 0.893 -170.0 2.741 67.3 0.031 24.5 0.449 -164.8
7.0 0.898 -171.6 2.341 62.4 0.031 26.6 0.467 -164.9
8.0 0.901 -173.3 2.036 57.4 0.031 27.6 0.485 -164.8
9.0 0.901 -174.1 1.793 53.2 0.029 28.8 0.496 -165.0
10.0 0.906 -174.9 1.604 49.2 0.029 33.3 0.511 -165.2
11.0 0.912 -175.3 1.449 45.1 0.028 35.6 0.526 -166.2
12.0 0.921 -175.9 1.316 40.9 0.029 36.4 0.538 -168.1
13.0 0.929 -176.3 1.202 36.6 0.029 36.0 0.553 -170.8
14.0 0.929 -176.6 1.096 32.2 0.030 36.4 0.564 -174.4
15.0 0.934 -176.7 1.010 27.8 0.030 37.1 0.578 -179.0
16.0 0.929 -176.6 0.920 23.2 0.031 33.7 0.597 175.9
17.0 0.933 -175.9 0.849 19.1 0.031 32.2 0.623 171.0
18.0 0.943 -176.0 0.790 14.4 0.033 30.4 0.652 165.8
19.0 0.943 -176.3 0.731 9.7 0.034 31.5 0.684
161.2
20.0 0.941 -176.7 0.672 5.2 0.036 31.0 0.710
157.2
21.0 0.930 -176.9 0.616 1.7 0.039 31.3 0.734
155.0
22.0 0.925 -177.3 0.578 -1.6 0.042 31.5 0.764 153.3
23.0 0.926 -177.9 0.545 -4.1 0.047 32.0 0.790 152.4
24.0 0.926 -179.1 0.518 -6.9 0.051 33.7 0.807 152.1
25.0 0.906 179.0 0.492 -8.9 0.057 34.8 0.817 152.4
26.0 0.906 178.1 0.471 -10.2 0.064 36.7 0.811 154.7
Note:
The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 20 mils each; 1 drain wires, 12 mils each; 4 source wires, 7 mils each.
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