EPA120B-100P
UPDATED
01/13/2006
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised January 2006
NON-HERMETIC 100MIL METAL FLANGE PACKAGE
+29.0dBm TYPICAL OUTPUT POWER
11.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 1200 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
27.5 29.0
P
1dB
Output Power at 1dB Compression f= 12GHz
Vds=8V, Ids=50% Idss f= 18GHz
29.0
dBm
8.5 10.0
G
1dB
Gain at 1dB Compression f= 12GHz
Vds=8V, Ids=50% Idss f= 18GHz
7.5
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=8 V, Ids=50% Idss f=12GHz
41 %
Idss
Saturated Drain Current Vds=3V, Vgs=0V
220 360 500 mA
Gm
Transconductance Vds=3V, Vgs=0V
240 380 mS
Vp
Pinch-off Voltage Vds=3V, Ids=3.0mA
-1.0
-2.5 V
BVgd
Drain Breakdown Voltage Igd=1.2mA
-13 -15 V
BVgs
Source Breakdown Voltage Igs=1.2mA
-7 -14 V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
45*
C/W
Note: * Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V 8V
Vgs
Gate-Source Voltage
-5V -3V
Igsf
Forward Gate Current
5.4 mA
1.8 mA
Igsr
Reserve Gate Current
0.9 mA
0.3 mA
Pin
Input Power
26 dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65/175
o
C -65/175
o
C
Pt
Total Power Dissipation
3.0 W
3.0 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
G
D
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