Excelics
EPA160A/EPA160AV
DATA SHEET
High Efficiency Heterojunction Power FET
+31.0dBm TYPICAL OUTPUT POWER
8.5dB TYPICAL POWER GAIN FOR EPA160A AND
10.0dB FOR EPA160AV AT 18GHz
0.3 X 1600 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EPA160AV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 40mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
EPA160A
EPA160AV
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
Output Power at 1dB Compression f=12GHz
31.0
31.0
P
1dB
Vds=8V, Ids=50% Idss f=18GHz
29.0
31.0
29.0
31.0
dBm
Gain at 1dB Compression f=12GHz
9.5
11.5
10.0
12.0
G
1dB
Vds=8V, Ids=50% Idss f=18GHz
8.5
10.0
dB
Gain at 1dB Compression
PAE
Vds=8V, Ids=50% Idss f=12GHz
45
46
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
290
480
660
290
480
660
mA
Gm
Transconductance Vds=3V, Vgs=0V
320
500
320
500
mS
Vp
Pinch-off Voltage Vds=3V, Ids=4.5mA
-1.0
-2.5
-1.0
-2.5
V
BVgd
Drain Breakdown Voltage Igd=1.6mA
-11
-15
-11
-15
V
BVgs
Source Breakdown Voltage Igs=1.6mA
-7
-14
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
30
22
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
EPA160A
EPA160AV
ABSOLUTE
1
CONTINUOUS
2
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
-8V
-3V
Ids
Drain Current
Idss
475mA
Idss
625mA
Igsf
Forward Gate Current
80mA
14mA
80mA
14mA
Pin
Input Power
28dBm
@ 3dB
Compression
28dBm
@ 3dB
Compression
Tch
Channel Temperature
175
o
C
150
o
C
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
4.5W
3.8W
6.0W
5.0W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
20 microns
All Dimensions In Microns
: Via Hole
No Via Hole For EPA160A
EPA160A/EPA160AV
DATA SHEET
High Efficiency Heterojunction Power FET
EPA160A
S-PARAMETERS
EPA160A 8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.915 -119.9 14.906 114.4 0.027 31.0 0.302 -128.9 21.0 0.932 155.6 0.642 -5.2 0.035 25.7 0.744 -175.4
2.0 0.907 -149.2 8.322 96.0 0.029 19.1 0.331 -146.1 22.0 0.932 150.8 0.601 -8.9 0.035 26.0 0.747 -174.5
4.0 0.907 -168.1 4.370 77.6 0.031 14.5 0.362 -151.0 24.0 0.932 143.6 0.526 -16.4 0.040 27.1 0.778 -175.2
6.0 0.908 -180.0 2.898 63.8 0.030 14.2 0.411 -150.0 26.0 0.928 139.3 0.460 -23.2 0.043 28.0 0.783 -179.1
8.0 0.912 174.7 2.172 52.5 0.030 16.0 0.448 -152.1 28.0 0.917 135.6 0.403 -31.9 0.049 25.7 0.820 170.8
10.0 0.918 170.0 1.693 41.7 0.028 17.0 0.498 -155.7 30.0 0.917 133.4 0.350 -39.1 0.051 20.1 0.834 164.0
12.0 0.923 165.9 1.349 31.4 0.028 21.7 0.549 -160.3 32.0 0.912 128.2 0.294 -46.1 0.048 19.9 0.865 162.3
14.0 0.931 162.9 1.084 22.4 0.028 23.4 0.601 -162.8 34.0 0.915 123.6 0.255 -50.3 0.048 23.0 0.876 163.9
16.0 0.936 160.3 0.896 13.7 0.028 25.0 0.658 -166.7 36.0 0.942 126.8 0.223 -52.3 0.048 22.2 0.869 162.9
18.0 0.941 159.3 0.761 5.9 0.029 25.3 0.697 -170.4 38.0 0.957 129.8 0.212 -53.8 0.055 17.0 0.872 158.9
20.0 0.936 158.5 0.675 -2.0 0.031 25.6 0.725 -175.6 40.0 0.952 138.3 0.205 -60.1 0.055 4.9 0.843 147.4
EPA160AV 8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.922 -115.7 13.969 116.1 0.027 30.9 0.271 -114.5 21.0 0.957 163.3 0.582 -11.9 0.023 5.0 0.766 -179.4
2.0 0.914 -146.8 7.872 96.1 0.031 17.2 0.299 -134.2 22.0 0.956 162.5 0.536 -15.4 0.024 4.2 0.786 179.1
4.0 0.917 -165.9 4.057 76.9 0.030 7.9 0.341 -140.5 24.0 0.954 159.0 0.452 -22.5 0.024 8.6 0.821 176.3
6.0 0.923 -176.7 2.690 63.0 0.029 4.3 0.393 -140.1 26.0 0.953 158.6 0.384 -30.1 0.026 10.9 0.844 169.1
8.0 0.929 -177.6 2.027 51.5 0.027 4.6 0.430 -148.0 28.0 0.932 153.0 0.335 -37.8 0.026 11.9 0.880 165.4
10.0 0.930 -178.2 1.596 40.1 0.025 4.2 0.485 -157.8 30.0 0.918 146.4 0.295 -46.5 0.028 9.1 0.899 161.7
12.0 0.936 175.2 1.273 28.3 0.023 1.8 0.556 -161.5 32.0 0.877 145.0 0.262 -56.0 0.027 -0.3 0.949 153.2
14.0 0.941 171.3 1.025 17.7 0.021 1.5 0.626 -167.2 34.0 0.934 144.2 0.229 -63.9 0.024 -3.7 0.896 146.3
16.0 0.950 167.4 0.833 8.1 0.021 2.2 0.688 -170.1 36.0 0.968 144.4 0.214 -69.5 0.025 -6.0 0.916 141.6
18.0 0.953 168.3 0.695 0.3 0.022 3.2 0.732 -176.3 38.0 0.985 146.4 0.201 -74.3 0.028 -22.8 0.952 137.4
20.0 0.955 165.1 0.597 -7.2 0.022 3.0 0.768 -177.8 40.0 0.986 146.4 0.189 -77.5 0.035 -40.3 0.952 137.2
Note: The data included 0.7 mils diameter Au bonding wires; 3 gate wires, 15 mils each; 3 drain wires, 20 mils each;
10 source wires, 7 mils each; no source wires for EPA160AV.
P-1dB & PAE vs. Vds
24
26
28
30
32
34
36
38
40
4 5 6 7 8
Drain-Source Voltage (V)
P-1dB (dBm)
10
15
20
25
30
35
40
45
50
PAE (%)
f = 12 GHz
Ids = 50% Idss
Pout & PAE vs. Pin
0
10
20
30
40
50
-5 0 5 10 15 20 25
Pin (dBm)
Pout (dBm) or PAE (%)
f = 12 GHz
Vds = 8V, Ids = 50% Idss
PAE
Pout
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