Excelics
EPA240D
DATA SHEET
High Efficiency Heterojunction Power FET
+33dBm TYPICAL OUTPUT POWER
20.0 dB TYPICAL POWER GAIN AT 2GHz
0.4 X 2400 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 60mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
31.0 33.0
33.0
dBm
G
1dB
Gain at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
18.5 20.0
15.0
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=2GHz
55
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
440
720
940
mA
Gm
Transconductance Vds=3V, Vgs=0V
480
760
mS
Vp
Pinch-off Voltage Vds=3V, Ids=6mA
-1.0
-2.5
V
BVgd
Drain Breakdown Voltage Igd=2.4mA
-11
-15
V
BVgs
Source Breakdown Voltage Igs=2.4mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
23
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
620mA
Igsf
Forward Gate Current
120mA
20mA
Pin
Input Power
30dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
6.0 W
5.0W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
13 microns
All Dimensions In Microns
104
620
72
155
75
100
94
410
D
G
S
S
EPA240D
DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.500 0.932 -84.1 15.622 132.6 0.023 49.4 0.267 -50.6
1.000 0.885 -124.4 10.061 109.7 0.029 33.4 0.194 -76.5
1.500 0.868 -144.6 7.154 97.1 0.031 27.8 0.165 -92.0
2.000 0.861 -156.7 5.496 88.3 0.032 26.3 0.156 -103.5
2.500 0.859 -165.1 4.443 81.3 0.033 26.8 0.158 -113.0
3.000 0.858 -171.6 3.720 75.2 0.034 28.5 0.166 -121.5
3.500 0.859 -176.9 3.194 69.7 0.034 30.9 0.179 -129.2
4.000 0.860 178.6 2.794 64.5 0.035 33.8 0.194 -136.4
4.500 0.862 174.6 2.478 59.5 0.037 36.8 0.212 -143.3
5.000 0.864 171.0 2.223 54.7 0.039 39.7 0.232 -149.8
5.500 0.867 167.6 2.012 50.0 0.041 42.4 0.255 -156.0
6.000 0.870 164.4 1.833 45.4 0.044 44.7 0.279 -162.0
6.500 0.873 161.4 1.680 40.9 0.048 46.5 0.304 -167.8
7.000 0.877 158.5 1.546 36.5 0.051 47.8 0.331 -173.5
7.500 0.880 155.8 1.428 32.2 0.055 48.5 0.359 -178.9
8.000 0.884 153.1 1.323 27.9 0.060 48.7 0.388 175.8
8.500 0.888 150.5 1.229 23.8 0.065 48.5 0.417 170.6
9.000 0.892 147.9 1.143 19.7 0.069 47.8 0.447 165.6
9.500 0.896 145.4 1.064 15.7 0.074 46.8 0.477 160.7
10.000 0.900 143.0 0.993 11.8 0.079 45.5 0.506 155.9
Note: The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 20 mils each; 1 drain wires, 12 mils each; 4 source wires, 7 mils each.
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