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Excelics
EPA240D-SOT89
DATA SHEET
DC-6GHz High Efficiency Heterojunction Power FET
Features
LOW COST SURFACE-MOUNT PLASTIC PACKAGE
+33dBm TYPICAL OUTPUT POWER
14.0dB TYPICAL POWER GAIN AT 2GHz
0.4dB TYPICAL NOISE FIGURE AT 2GHz
+40dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT
POINT AT 2GHz
0.4 X 2400 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY AND HIGH RELIABILITY
Applications
Analog and Digital Wireless System
High Dynamic Range LNA
HPA
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f = 2GHz
Vds=8V, Ids=350mA
31.5 33.0
dBm
G
1dB
Gain at 1dB Compression f = 2GHz
Vds=8V, Ids=350mA
12.0 14.0
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=350mA f = 2GHz
55 %
NF
Noise Figure f = 2GHz
Vds=5V, Ids=150mA
Vds=5V, Ids=350mA
0.4
0.8
dB
IP3
Output 3rd Order Intercept Point f = 2GHz
Vds=5-8V, Ids=350mA
Vds=5V, Ids=150mA
40
38
dBm
Idss
Saturated Drain Current Vds=3V, Vgs=0V
440
720
940
mA
Gm
Transconductance Vds=3V, Vgs=0V
480 760
mS
Vp
Pinch-off Voltage Vds=3V, Ids=6mA
-1.0
-2.5
V
BVgd
Drain Breakdown Voltage Igd=2.4mA
-11
-15
V
BVgs
Source Breakdown Voltage Igs=2.4mA
-7
-14
V
Rth
Thermal
Resistance
25*
o
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source
Voltage 12V
8V
Vgs
Gate-Source
Voltage -8V
-3V
Ids
Drain Current
Idss
570mA
Igsf
Forward Gate Current
120mA
20mA
Pin
Input Power
30dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 150
o
C
Tstg
Storage Temperature
-65/175
o
C -65/150
o
C
Pt
Total Power Dissipation
5.5 W
4.6 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
(Top View)
All Dimensions In Mils
EPA240D-SOT89
DATA SHEET
DC-6GHz High Efficiency Heterojunction Power FET
Typical Performance
S21 Distribution Noise Figure & IP3
S-PARAMETERS S-PARAMETERS
8V, 350mA
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.1 0.905 -80.2 40.502 134.6 0.018 56.7 0.397 -114.3
0.2 0.864 -117.6 26.481 114.1 0.025 33.5 0.494 -143.0
0.3 0.861 -137.2 19.078 103.0 0.024 28.7 0.510 -155.1
0.4 0.860 -149.8 14.721 95.6 0.026 26.6 0.528 -163.2
0.5 0.856 -158.0 11.930 90.2 0.027 25.5 0.533 -169.2
1.0 0.849 178.4 6.110 71.2 0.032 24.5 0.524 177.1
1.5 0.780 161.3 4.969 57.7 0.047 24.4 0.409 162.2
2.0 0.777 146.9 3.783 43.8 0.056 21.1 0.407 152.0
2.5 0.767 133.6 3.113 30.5 0.066 15.5 0.395 143.0
3.0 0.756 120.0 2.687 16.4 0.078 7.8 0.377 132.7
3.5 0.760 104.2 2.371 1.2 0.089 -1.2 0.354 120.2
4.0 0.756 87.3 2.078 -15.3 0.098 -13.5 0.358 101.7
4.5 0.780 70.9 1.777 -31.4 0.103 -24.6 0.392 81.7
5.0 0.815 56.0 1.516 -46.2 0.105 -35.6 0.456 66.5
5.5 0.845 43.5 1.296 -59.8 0.105 -45.9 0.510 56.0
6.0 0.859 32.0 1.118 -72.4 0.104 -55.2 0.543 46.7
6.5 0.864 21.8 0.978 -84.3 0.098 -63.7 0.569 36.2
7.0 0.877 11.6 0.870 -97.1 0.094 -71.0 0.599 23.9
7.5 0.888 0.2 0.760 -111.0 0.088 -74.8 0.624 10.9
8.0 0.864 -10.7 0.623 -123.5 0.097 -78.4 0.645 -1.3
8.5 0.854 -18.9 0.520 -132.5 0.100 -93.6 0.682 -10.0
9.0 0.861 -24.6 0.445 -140.4 0.087 -109.6 0.723 -16.6
9.5 0.879 -28.9 0.384 -147.6 0.076 -119.7 0.739 -21.3
10.0 0.884 -31.7 0.336 -156.2 0.059 -139.2 0.741 -23.9
5V, 150mA
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.1 0.874 -73.6 36.578 140.1 0.024 32.5 0.371 -136.7
0.2 0.903 -113.7 25.627 118.3 0.024 38.5 0.507 -147.1
0.3 0.887 -135.1 18.754 106.3 0.025 31.5 0.548 -158.5
0.4 0.877 -148.4 14.600 98.4 0.027 27.0 0.569 -165.9
0.5 0.870 -157.0 11.886 92.5 0.029 26.1 0.579 -171.7
1.0 0.855 178.6 6.137 73.2 0.034 24.2 0.576 174.7
1.5 0.781 161.6 5.042 59.5 0.050 23.3 0.469 159.3
2.0 0.775 147.1 3.852 45.8 0.060 19.7 0.467 148.8
2.5 0.763 133.6 3.177 32.6 0.071 13.4 0.453 139.2
3.0 0.752 120.0 2.748 18.5 0.083 5.8 0.436 128.1
3.5 0.755 104.3 2.427 3.5 0.094 -4.1 0.413 115.2
4.0 0.751 87.4 2.126 -13.0 0.104 -16.2 0.418 97.0
4.5 0.775 70.9 1.815 -28.9 0.108 -28.0 0.453 78.2
5.0 0.810 56.1 1.543 -43.5 0.108 -39.2 0.513 63.4
5.5 0.841 43.6 1.318 -56.7 0.107 -49.3 0.563 53.0
6.0 0.854 32.2 1.137 -69.1 0.105 -58.9 0.592 43.6
6.5 0.860 22.0 0.995 -80.6 0.100 -67.3 0.616 33.2
7.0 0.873 11.8 0.886 -93.1 0.094 -74.5 0.642 21.2
7.5 0.885 0.5 0.776 -106.6 0.087 -78.0 0.662 8.2
8.0 0.863 -10.6 0.639 -118.7 0.095 -80.8 0.677 -3.9
8.5 0.852 -18.7 0.536 -127.7 0.100 -95.5 0.710 -12.2
9.0 0.861 -24.5 0.457 -135.3 0.086 -111.9 0.747 -18.5
9.5 0.878 -28.6 0.397 -142.2 0.077 -121.5 0.762 -23.0
10.0 0.882 -31.5 0.346 -150.4 0.059 -142.6 0.756 -25.6
E PA 2 40 D -S O T 89
(5V, 2GH z)
0
0.5
1
1.5
0 100 200 300 400 500 600
Ids [m A ]
NF
[
d
B
]
36
38
40
42
44
46
IP
3
[
d
B
m
]
NF
IP3
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