EPA960CR-CP083
UPDATED
01/16/2006
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised January 2006
All Dimensions in mil
Tolerance: 3 mil
FEATURES
NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
+38 dBm OUTPUT POWER AT 1dB COMPRESSION
16.5 dB GAIN AT 2 GHz
0.4x9600
MICRON
RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss
f = 4.0 GHz
36.5
38.0
38.0
dBm
G
1dB
Gain at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss f = 4.0 GHz
15.0
16.5
11.5
dB
PAE
Power Added Efficiency at 1dB Compression
Vds = 8 V, Ids=50% Idss
f = 2.0 GHz
45 %
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
1760
2880
3760
mA
G
M
Transconductance
V
DS
= 3 V, V
GS
= 0 V
1920
3120
mS
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 28 mA
-1.0
-2.5
V
BV
GD
Drain Breakdown Voltage I
GD
= 9.6 mA
-11
-15
V
BV
GS
Source Breakdown Voltage
I
GS
= 9.6 mA
-7
-14
V
R
TH
*
Thermal Resistance
6*
o
C/W
Notes:
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V 8V
Vgs
Gate-Source Voltage
-8V -3V
Igsf
Forward Gate Current
86.4 mA
28.8 mA
Igsr
Reserve Gate Current
14.4 mA
4.8 mA
Pin
Input Power
36 dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65/175
o
C -65/175
o
C
Pt
Total Power Dissipation
25 W
25 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EPA
960CR
EPA960CR-CP083
UPDATED
01/16/2006
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised January 2006
S-PARAMETERS
8V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.5 0.969
-167.6
8.140 88.4 0.008 24.0 0.814 178.7
1.0 0.978 178.4
4.058 73.8 0.011 32.3 0.784 175.2
1.5 0.935 167.8
3.512 66.1 0.016 38.4 0.741 169.4
2.0 0.929 161.0
2.695 57.2 0.021 38.2 0.741 165.6
2.5 0.922 155.5
2.253 49.3 0.025 38.3 0.727 163.4
3.0 0.918 149.8
2.032 40.2 0.030 36.2 0.705 159.7
3.5 0.908 142.2
1.891 30.6 0.037 32.0 0.685 154.5
4.0 0.891 132.4
1.814 19.2 0.045 23.2 0.659 147.7
4.5 0.879 119.7
1.753 5.8 0.052 14.6 0.634 139.9
5.0 0.868 105.9
1.673 -8.2 0.060 5.2 0.623 130.9
5.5 0.859 91.7 1.585 -22.2 0.068 -5.6 0.617 121.2
6.0 0.850 78.2 1.501 -35.7 0.076 -16.6 0.608 112.0
6.5 0.843 64.9 1.461 -46.5 0.084 -23.6 0.565 109.2
7.0 0.825 51.6 1.475 -61.0 0.098 -34.6 0.553 98.3
7.5 0.815 33.9 1.490 -78.4 0.112 -49.5 0.540 81.4
8.0 0.821 12.7 1.415 -98.4 0.119 -66.6 0.521 61.3
8.5 0.850 -6.9 1.253
-116.7
0.120 -82.4 0.546 39.2
9.0 0.877 -22.5 1.087
-133.1 0.114 -98.7 0.593 20.5
9.5 0.892 -33.5 0.928 -145.9 0.108 -110.8
0.609 8.8
10.0 0.902 -43.6 0.852 -153.8 0.111 -118.9
0.665 4.5
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