FBI4A
7M1
50
35
FBI4B
7M1
100
70
FBI4D
7M1
200
140
FBI4G
7M1
400
280
FBI4J
7M1
600
420
FBI4K
7M1
800
560
FBI4M
7M1
1000
700
Mounting Instructions
High temperature soldering guaranteed: 260 C 10 sc.
Recommended mounting torque: 8 Kg.cm.
FBI4A7M1.......FBI4M7M1
4 Amp. Glass Passivated Bridge Rectifier
Dimensions in mm.
Maximum Ratings, according to IEC publication No. 134
Peak recurrent reverse voltage (V)
Maximum RMS voltage (V)
Max. average Forward current with heatsink
without heatsink
10 ms. peak forward surge current
(Jedec Method)
Current squared time (rating for fusing)
(1ms.<t<10ms. Tc = 25C)
Dielectric strength (terminals to case, AC 1 min.)
Operating temperature range
Storage temperature range
V
DIS
T
j
T
stg
4.0 A at 100 C
3.0 A at 40 C
150 A
2000 V
55 to + 150 C
55 to +150 C
Electrical Characteristics at Tamb = 25C
V
F
Max. forward voltage drop per diode at I
F
= 2.0 A
I
R
0.95 V
Max. reverse current at V
RRM
Voltage
50 to 1000 V.
Current
4.0 A.
Plastic
Case
5 A
I
2
t
I
FSM
I
F(AV)
V
RRM
V
RMS
110 A
2
sec
MAXIMUM THERMAL RESISTANCE
Junction-Case. With Heatsink.
Junction-Ambient. Without Heatsink.
5 C/W
22 C/W
R
th (j-c)
R
th (j-a)
25
3.2
7.5
7.5
1
0.7
3.5
1
+ 0.05
+
_
7.5
L
suffix
17.5
8
4
Glass Passivated Junction Chips.
UL recognized under component index file
number E130180.
Lead and polarity identifications.
Case: Molded Plastic.
Ideal for printed circuit board (P.C.B.).
High surge current capability.
The plastic material carries U/L recognition 94 V-O.
Jan - 00
MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
Number of cycles at 50 Hz.
10
100
0
50
100
150
200
1
V
F
, instantaneous forward voltage (V)
0.6
1.0
1.4
0
0.1
1.0
10
Tamb = 25 C
Characteristic Curves
FBI4 - 7M1
TYPICAL FORWARD CHARACTERISTIC
1
3
4
Tamb, ambient temperature (C)
2
0
50
100
150 175
0
125
25
75
FORWARD CURRENT DERATING CURVE
heatsink
Tc
Tc
sine wave
R-load
on heatsink
+
_
on glass-epoxi substrate
P.C.B.
soldering land 5 mm
sine wave
R-load
free in air
Jan - 00
+
_
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