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Электронный компонент: FES26C

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FES26A ...... FES26C
1 Amp. Surface Mounted Very Fast Soft Recovery Glass Passivated Avalanche Diode
Glass Passivated Junction
High current capability
The plastic material carries U/L 94 V-0
Low profile package.
Easy pick and place.
High temperature soldering 260 C 10 sec.
Dimensions in mm.
CASE:
SMA/DO-214AC
Maximum Ratings, according to IEC publication No. 134
Electrical Characteristics at Tamb = 25 C
V
F
Max. forward voltage drop at I
F
= 1 A
I
R
5 A
100 A
Max. reverse current at V
RRM
R
thj-l
R
thj-a
Typical thermal resistance
(5 x 5 mm
2
x 130 m Copper Area)
27 C/W
75 C/W
Voltage
200 to 600 V.
Current
1.0 A at 55 C.
at 25 C
at 100 C
at 25 C
at 150 C
2.5 V
1.3 V
MECHANICAL DATA
Terminals: Solder plated, solderable per IEC 68-2-20.
Standard Packaging: 4 mm. tape (EIA-RS-481).
Weight: 0.064 g.
200
140
200
Peak Recurrent reverse voltage (V)
Maximum RMS voltage
Maximum DC blocking voltage
Forward current at Tamb = 55 C
Recurrent peak forward current
10 ms. peak forward surge current
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
T
j
T
stg
Operating temperature range
Storage temperature range
55 to + 150 C
55 to + 150 C
t
rr
Max. reverse recovery time from
I
F
= 0.5 A ; I
R
= 1 A ; I
RR
= 0.25 A
V
BR
Avalanche breakdown voltage
at 100 A (V)
>700
E
RSM
Maximum non repetitive peak
reverse avalanche energy.
I
R
= 1A ; T
J
= 25 C
10 mJ
30 ns
>300
>500
1 A
10 A
30 A
(Jedec Method)
400
280
400
600
420
600
Marking Code
Jun - 03
2.0
4.2
Standard soldering pad
1.25
0.25
5.1
0.3
1.25
0.25
Year code
FES26A
FES26B
FES26C
E1
E2
E3
Week code
Type No. Closs
FES26
Rating And Characteristic Curves
FORWARD CURRENT DERATING CURVE
MAXIMUM FORWARD CHARACTERISTIC
Lead temperature (C)
0
50
175
25
75
150
125
100
MAXIMUM NON REPETITIVE
PEAK FORWARD SURGE CURRENT
1
Number of cycles at 50 Hz.
0
2
1.5
1
0.5
0
2
4
6
10
100
60
40
20
50
40
30
20
10
0
V , instantaneous forward voltage (V)
F
1.4
1.2
1
0.8
0.6
0.4
0.2
0
TYPICAL JUNCTION CAPACITANCE
1
5
10
50
100
14
V , reverse voltage (V)
R
5 x 5 mm
2
x 130
Thick Copper Land Areas
1
2
3
4
5
T = 175 C
j
T = 25 C
j
f = 1 MHz
T = 25 C
j
10
5
1
Jun - 03