On-State Current
1.25 Amp
FS02...N
SURFACE MOUNT SCR
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required using surface mount
technology.
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current*
Average On-state Current*
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER
CONDITIONS
Min.
Max.
Unit
SOT223
(Plastic)
Gate Trigger Current
< 200 A
Off-State Voltage
200 V 800 V
SYMBOL
I
T(AV)
I
TSM
I
TSM
I
2
t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
Half Cycle,
= 180 , T
tab
= 95 C
Half Cycle,
= 180 , T
tab
= 95 C
Half Cycle, 60 Hz, T
j
= 25 C
Half Cycle, 50 Hz, T
j
= 25 C
t
p
= 10ms, Half Cycle
I
GR
= 10 A, T
j
= 25 C
20 s max.
20 s max.
20 ms max.
10s max.
1.25
0.8
25
22.5
2.5
8
-40
-40
A
A
A
A
A
2
s
V
A
W
W
C
C
C
1.2
3
0.2
+125
+150
260
* with 5 cm
2
copper (e= 35
m) surface under tab.
Jun - 02
Repetitive Peak Off State
Voltage
PARAMETER
CONDITIONS
VOLTAGE
Unit
SYMBOL
V
DRM
V
RRM
R
GK
= 1 K
B
200
V
D
400
M
600
N
800
FS02...N
SURFACE MOUNT SCR
PART NUMBER INFORMATION
Jun - 02
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
S
02
01
B
N
00
FORMING
RB
PACKAGING
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
On-state Threshold Voltage
Dinamic Resistance
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
V
D
= 12 V
DC
, R
L
= 140
, T
j
= 25 C
01
1
20
A
04
15
50
500
5
1.45
0.9
150
0.8
0.1
15
A
V
V
m
V
V
mA
mA
V/s
MIN
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MIN
MIN
50
25
60
A/s
/ I
RRM
V
TM
V
T(O)
r
d
V
GT
I
H
I
L
dv / dt
di / dt
R
th(j-l)
R
th(j-a)
Critical Rate of Voltage
Rise
Critical Rate of Current Rise
Thermal Resistance
Junction-Leads for DC
Thermal Resistance
Junction-Ambient
C/W
C/W
V
D
= V
DRM
, R
GK
= 1K
,
T
j
= 125 C
T
j
= 25 C
V
R
= V
RRM
,
at I
T
= 1.6 Amp, tp = 380 s, T
j
= 25 C
T
j
= 125 C
T
j
= 125 C
V
D
= 12 V
DC
, R
L
= 140
, T
j
= 25 C
I
T
= 50 mA
, R
GK
= 1K
, T
j
= 25 C
I
G
= 1 mA
, R
GK
= 1K
, T
j
= 25 C
V
D
= 0.67 x V
DRM
, R
GK
= 1K
,
T
j
= 125 C
5
6
02
200
03
20
200
15
20
10
Tr
100 ns, F = 60 Hz,
T
j
= 125 C
I
G
= 2 x I
GT
V
GD
V
D
= V
DRM
, R
L
= 3.3K
,
T
j
= 125 C
R
GK
= 1K
,
FS02...N
SURFACE MOUNT SCR
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
P (W)
360
Fig. 1: Maximum average power dissipation
versus average on-state current
0
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
40
60
80
100 120 140
P (W)
Fig. 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and T tab).
T tab (C)
-85
-95
-105
-115
-125
Fig. 3: Average on-state current versus tab
temperature
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Igt (Tj)
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
-40 -20
0
60
80 100 120 140
Igt (Tj = 25 C)
Ih (Tj)
Ih (Tj = 25 C)
40
20
Ih
Igt
1
10
100
1000
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
25
20
15
10
5
0
I TSM (A)
Tj initial = 25 C
1.00
0.10
0.01
Zth(j-a) / Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Standard foot print,
e (Cu) = 35 m
Jun - 02
Rth (j-l)
Rth (j-a)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I T(AV) (A)
0
20
40
60
80
100
120
= 180
10
30
50
70
90
110
130
DC
1.0
1.2 1.4
= 30
= 60
= 90
= 120
= 180
DC
Tamb (C)
Tj (C)
Number of cycles
tp (s)
T lead (C)
IT(AV)(A)
FS02...N
Jun - 02
SURFACE MOUNT SCR
PACKAGE MECHANICAL DATA
SOT223 (Plastic)
A
B
C
D
E
F
G
H
I
J
K
REF.
DIMENSIONS
Milimeters
Min.
Typ.
Max.
Weight: 0.11 g
FOOT PRINT
6.30
6.70
3.30
-
-
2.95
0.65
1.50
0.50
-
0.25
6.50
7.00
3.50
4.60
2.30
3.00
0.70
1.60
0.60
0.02
0.30
6.70
7.30
3.70
-
-
3.15
0.85
1.70
0.70
0.05
0.35
3.3
1.5
1.5
(3x) 1
2.3
4.6
6.4
G
F
A
16 max. (4x)
H
D
E
I
B
C
J
10 max.
K
Fig. 8: On-state characteristics (maximum
values).
100
10
1
0.1
ITSM(A). I
2
t (A
2
s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp
10 ms, and corresponding value of I
2
t.
100
10
1
ITM(A)
1
10
0
0.5 1 1.5
2 2.5 3 3.5 4 4.5
Tj max
Tj initial
25 C
Tj max
Vto = 1.05 V
Rt = 0.150
VTM(V)
Tj initial = 25 C
tp(ms)
I
2
t
ITSM
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