G
G
K
On-State Current
1.25 Amp
FS02...A/B
SENSITIVE GATE SCR
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required.
Jun - 02
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER
CONDITIONS
Min.
Max.
Unit
TO92
(Plastic)
RD26
(Plastic)
FS02...A
FS02...B
Gate Trigger Current
< 200 A
Off-State Voltage
200 V 800 V
SYMBOL
I
T(AV)
I
TSM
I
TSM
I
2
t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
All Conduction Angle, T
L
= 60 C
Half Cycle,
= 180 , T
L
= 60 C
Half Cycle, 60 Hz, T
j
= 25 C
Half Cycle, 50 Hz, T
j
= 25 C
t
p
= 10ms, Half Cycle
I
GR
= 10 A, T
j
= 25 C
20 s max.
20 s max.
20ms max.
1.6 mm from case, 10s max.
1.25
0.8
25
22.5
2.5
8
-40
-40
A
A
A
A
A
2
s
V
A
W
W
C
C
C
1.2
3
0.2
+125
+150
260
A
K
A
Repetitive Peak Off State
Voltage
PARAMETER
CONDITIONS
VOLTAGE
Unit
SYMBOL
V
DRM
V
RRM
R
GK
= 1 K
B
200
V
D
400
M
600
N
800
FS02...A/B
SENSITIVE GATE SCR
Jun - 02
PART NUMBER INFORMATION
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
S
02
01
B
A
00
FORMING
BU
PACKAGING
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
On-state Threshold Voltage
Dinamic Resistance
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
V
D
= 12 V
DC
, R
L
= 140
, T
j
= 25 C
01
1
20
A
04
15
50
500
5
1.45
0.9
200
0.8
0.1
15
A
V
V
m
V
V
mA
mA
V/s
MIN
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MIN
MIN
50
60
150
A/s
/ I
RRM
V
TM
V
T(O)
r
d
V
GT
I
H
I
L
dv / dt
di / dt
R
th(j-l)
R
th(j-a)
Critical Rate of Voltage
Rise
Critical Rate of Current Rise
Thermal Resistance
Junction-Leads for DC
Thermal Resistance
Junction-Ambient
C/W
C/W
V
D
= V
DRM
, R
GK
= 1K
,
T
j
= 125 C
T
j
= 25 C
V
R
= V
RRM
,
at I
T
= 1.6 Amp, tp = 380 s, T
j
= 25 C
T
j
= 125 C
T
j
= 125 C
V
D
= 12 V
DC
, R
L
= 140
, T
j
= 25 C
I
T
= 50 mA
, R
GK
= 1K
, T
j
= 25 C
I
G
= 1 mA
, R
GK
= 1K
, T
j
= 25 C
V
D
= 0.67 x V
DRM
, R
GK
= 1K
,
T
j
= 125 C
5
6
02
200
03
20
200
15
20
10
Tr
100 ns, F = 60 Hz,
T
j
= 125 C
I
G
= 2 x I
GT
V
GD
V
D
= V
DRM
, R
L
= 3.3K
,
T
j
= 125 C
R
GK
= 1K
,
Jun - 02
Fig. 1: Maximum average power dissipation
versus average on-state current
0
20
1.2
1.0
0.8
0.6
0.4
0.2
0.0
40
60
80
100 120 140
P (W)
Fig. 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and Tlead).
Tlead (C)
-50
-70
-90
-110
Rth (j-a)
Fig. 3: Average on-state current versus lead
temperature
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Igt (Tj)
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
-40 -20
0
60
80 100 120 140
Igt (Tj = 25 C)
Ih (Tj)
Ih (Tj = 25 C)
40
20
Ih
Igt
1
10
100
1000
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
25
20
15
10
5
0
I TSM (A)
Tj initial = 25 C
1.00
0.10
0.01
Zth(j-a) / Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
FS02...A/B
SENSITIVE GATE SCR
Rth (j-l)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I T(AV) (A)
0
20
40
60
80
100
120
= 180
10
30
50
70
90
110
130
DC
0 0.1
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8
P (W)
360
0.9 1 1.1 1.2
DC
= 30
= 60
= 90
= 120
= 180
Tamb (C)
Tj (C)
Number of cycles
tp (s)
T lead (C)
IT(AV)(A)
Jun - 02
FS02...A/B
SENSITIVE GATE SCR
PACKAGE MECHANICAL DATA
TO92 (Plastic)
A
B
C
D
E
F
G
H
a
b
REF.
DIMENSIONS
Milimeters
Min.
Typ.
Max.
Marking: type number
Weight: 0.2 g
PACKAGE MECHANICAL DATA
RD26 (Plastic)
-
4.55
2.42
1.15
4.55
12.7
3.55
-
0.38
0.33
1.5
4.6
2.54
1.27
4.6
14.1
3.6
1.5
0.43
0.38
-
4.65
2.66
1.39
4.65
15.5
3.65
-
0.48
0.43
A
B
C
D
E
F
G
a
b
REF.
DIMENSIONS
Millimeters
Min.
Typ.
Max.
-
4.55
2.42
1.15
4.55
12.7
3.55
0.38
0.33
1.5
4.6
2.54
1.27
4.6
14.1
3.6
0.43
0.38
-
4.65
2.66
1.39
4.65
15.5
3.65
0.48
0.43
Marking: type number
Weight: 0.2 g
A
B
C
D
G
b
E
F
H
a
C
D
G
A
a
B
E
F
45
b
Fig. 8: On-state characteristics (maximum
values).
100
10
1
0.1
ITSM(A). I
2
t (A
2
s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp
10 ms, and corresponding value of I
2
t.
100
10
1
ITM(A)
1
10
0
0.5 1 1.5
2 2.5 3 3.5 4 4.5
Tj max
Tj initial
25 C
Tj max
Vto = 1.05 V
Rt = 0.150
VTM(V)
Tj initial = 25 C
tp(ms)
I
2
t
ITSM
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