On-State Current
4 Amp
FS04...E/F
SENSITIVE GATE SCR
These series of Silicon Controlled R ectifier use
a high performance PNPN technology.
These parts are intended for general purpose
applications where high gate sensitivity is
required like small engine ignition, SMPS
crowbar protection, food procesor.
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Lead Temperature for Soldering
I
T(RMS)
PARAMETER
CONDITIONS
Min.
Max.
Unit
Gate Trigger Current
>15A < 200 A
Off-State Voltage
200 V 600 V
SYMBOL
I
T(AV)
I
TSM
I
TSM
I
2
t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
L
180 Conduction Angle,
Tc = 115 C
Ta = 25 C
Half Cycle,
= 180 , Tc = 115 C
Ta = 25 C
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t
p
= 10ms, Half Cycle
I
GR
= 10 A
20 s max.
20 s max.
20 ms max.
10s at 4.5mm from case
-40
-40
A
A
A
A
A
2
s
V
A
W
W
C
C
C
4
1.35
2.5
0.9
33
30
4.5
8
1.2
3
0.2
+125
+150
260
Feb - 03
Repetitive Peak Off State
Voltage
PARAMETER
CONDITIONS
VOLTAGE
Unit
SYMBOL
V
DRM
V
RRM
R
GK
= 1 K
B
200
V
D
400
M
600
TO202-1 (E)
K
A
G
A
TO202-3 (F)
K
A
G
A
FS04...E/F
SENSITIVE GATE SCR
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
Gate Trigger Voltage
Holding Current
Latching Current
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
V
D
= 12 V
DC
, R
L
= 140
, T
j
= 25 C
A
04
15
50
02
200
1
5
1.8
0.8
5
6
15
10
mA
A
V
V
mA
mA
V/s
MIN
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MIN
MIN
50
7.5
100
A/s
/ I
RRM
V
TM
V
GT
I
H
I
L
dv / dt
di / dt
Critical Rate of Voltage
Rise
Critical Rate of Current Rise
V
D
= V
DRM
, R
GK
= 1K
,
T
j
= 125 C
T
j
= 25 C
V
R
= V
RRM
,
at I
T
= 8 Amp, tp = 380 s, T
j
= 25 C
V
D
= 12 V
DC
, R
L
= 140
, T
j
= 25 C
I
T
= 50 mA
, R
GK
= 1K
, T
j
= 25 C
I
G
= 1 mA
, R
GK
= 1K
, T
j
= 25 C
V
D
= 0.67 x V
DRM
, R
GK
= 1K
,
T
j
= 110 C
PART NUMBER INFORMATION
Feb - 03
C/W
R
th(j-a)
Thermal Resistance
Junction-Ambient
C/W
R
th(j-c)
Thermal Resistance
Junction-Case for DC
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
S
04
02
B
E
00
FORMING
TU
PACKAGING
Tr
100 ns, f = 60 Hz,
T
j
= 125 C
I
G
= 2 x I
GT
FS04...E/F
SENSITIVE GATE SCR
Feb - 03
Fig. 1: Maximum average power disipation
versus average on-state current.
0
2
5
4
3
2
1
0
P (W)
IT(av)(A)
0.5
3
360
Fig. 2: Average and D.C. on-state current
versus case temperature.
I T(av) (A)
T case (C)
5
4
3
2
1
0
0
25
50
75
100
125
1
1.5
2.5
3.5
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
IGT, IH (Tj) / IGT, IH (Tj = 25 C)
Fig. 4: Relative variation of gate trigger
current, holding and latching current versus
junction temperature.
Tj (C)
1.66
1.33
1.00
0.66
0.33
0.00
-40 -20
20
60
80 100
0
40
120 140
IH & IL
IGT
ITSM(A). I
2
t (A
2
s)
Fig. 6: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp
10 ms, and corresponding value of I
2
t.
100
10
1
1
10
Tj initial = 25 C
tp(ms)
ITSM
I
2
t
1
10
100
1000
Fig. 5: Non repetitive surge peak on-state
current versus number of cycles.
35
30
25
20
15
10
5
0
I TSM (A)
Number of cycles
Tj initial = 25 C
F= 50Hz
= 180
D.C.
1.00
0.10
0.01
Zth(j-a) / Rth(j-a)
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
tp (s)
FS04...E/F
Feb - 03
SENSITIVE GATE SCR
Fig. 7: On-state characteristics (maximum
values).
100
10
1
ITM(A)
0
0.5 1 1.5
2 2.5 3 3.5 4 4.5
Tj max
Tj initial
25 C
VTM(V)
Tj max
Vto = 0.95 V
Rt = 0.100
(.287)
7,3
C
D
10,5
(.413)
N1
2,54
(.100)
P
5,3
N
(.209)
max.
O
max.
max.
1,4
(.055)
(.028)
0,7
TO 202-3
A
max.
10,1
(.398)
1,5
(.059)
max.
F
M
4,5
(.177)
H
(.020)
0,51
J
1,5
(.059)
3,16
3,20
(.124)
(.126)
K
(.126)
3,2
A
max.
10,1
(.398)
G
J
H
1,5
(.059)
(.020)
0,51
M
13,7
(.540)
(.287)
7,3
C
D
10,5
(.413)
N1
2,54
(.100)
P
5,3
N
(.209)
max.
O
I
max.
max.
1,4
(.055)
(.028)
0,7
4,5
(.177)
TO 202-1
1,5
(.059)
max.
F
PACKAGE MECHANICAL DATA
TO 202-1
TO 202-3
PDF 
ZIP