On-State Current
8 Amp
FS0802.I
SENSITIVE GATE SCR
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required.
Feb - 03
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER
CONDITIONS
Min.
Max.
Unit
Gate Trigger Current
< 200 A
Off-State Voltage
200 V 600 V
SYMBOL
I
T(AV)
I
TSM
I
TSM
I
2
t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
180 Conduction Angle, T
c
= 110 C
Half Cycle,
= 180 , T
C
= 110 C
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t
p
= 10ms, Half Cycle
I
GR
= 10 A
20 s max.
20 s max.
20ms max.
10s max.
-40
-40
A
A
A
A
A
2
s
V
A
W
W
C
C
C
8
5
73
70
24.5
8
4
5
1
+125
+150
260
Repetitive Peak Off State
Voltage
PARAMETER
CONDITIONS
VOLTAGE
Unit
SYMBOL
V
DRM
V
RRM
R
GK
= 1 K
B
200
V
D
400
M
600
IPAK
(Plastic)
K
A
G
A
FS0802.I
SENSITIVE GATE SCR
Feb - 03
PART NUMBER INFORMATION
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
S
08
02
B
I
00
FORMING
TR
PACKAGING
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
V
D
= 12 V
DC
, R
L
= 140
. T
j
= 25 C
A
02
200
1
5
1.6
0.8
0.1
mA
A
V
V
V
MIN
MAX
MAX
MAX
MAX
MAX
MIN
50
100
MAX
/ I
RRM
V
TM
V
GT
V
GD
I
H
di / dt
R
th(j-a)
Critical Rate of Current Rise
Thermal Resistance
Junction-Amb for DC
C/W
V
D
= V
DRM
,
T
j
= 125 C
T
j
= 25 C
V
R
= V
RRM
,
at I
T
= 16 Amp, tp = 380 s, T
j
= 25 C
I
T
= 50 mA
,
Tr
100 ns, T
j
= 125 C
V
D
= 12 V
DC
, R
L
= 140
, T
j
= 25 C
V
D
= V
DRM
, R
L
= 3.3K
,
T
j
= 125 C
mA
MIN
A/s
R
d
T
j
= 125 C
R
d
Dynamic resistance
MAX
46
m
5
MAX
I
L
mA
6
Latching Current
I
G
= 1 mA
V/s
dv / dt
Critical Rate of Voltage Rise
V
D
= 0.67 x V
DRM
,
MIN
5
20
R
th(j-c)
Thermal Resistance
Junction-Case for DC
C/W
V
t0
T
j
= 125 C
Threshold Voltage
MAX
0.85
V
R
GK
= 220
R
GK
= 220
R
GK
= 220
R
GK
=1K
T
j
= 25 C
R
GK
=1K
I
G
= 2 x I
GT
T
j
= 125 C
Feb - 03
FS0802.I
SENSITIVE GATE SCR
Fig. 1: Maximum average power dissipation
versus average on-state current.
0
2
10
8
6
4
2
0
4
6
P (W)
IT(av)(A)
1
3
5
7
360
Fig. 2: Average and D.C. on-state current
versus case temperature.
I T(av) (A)
T case (C)
10
8
6
4
2
0
0
25
50
75
100
125
= 180
D.C.
1.0
K = [Zth(j-c) / Rth (j-c)]
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-3
1E-2
1E-1
1E+0
tp (s)
0.5
0.2
0.1
IGT, IH (Tj) / IGT, IH (Tj = 25 C)
Fig. 4: Relative variation of gate trigger
current, holding and latching current versus
junction temperature.
Tj (C)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
20
60
80 100
0
40
120 140
IGT
IH & IL
1
10
100
1000
Fig. 5: Non repetitive surge peak on-state
current versus number of cycles.
80
70
60
50
40
30
20
10
0
I TSM (A)
Number of cycles
Tj initial = 25 C
F = 50 Hz
300
1
10
ITSM(A). I
2
t (A
2
s)
Fig. 6: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I
2
t.
tp(ms)
2
5
100
10
ITSM
20
50
I
2
t
Tj initial = 25 C
Feb - 03
FS0802.I
SENSITIVE GATE SCR
PACKAGE MECHANICAL DATA
IPAK TO 251-AA
Marking: type number
Weight: 0.2 g
1x0.15
E
D
L3
L1
L
b
e
b1
H
8
2
A
8
2
8
2
8
2
c2
c
A1
D1
E1
8
2
A
A1
b
b1
c
c2
D
D1
E
E1
e
L
L1
L3
REF.
DIMENSIONS
Milimeters
Min.
Nominal
Max.
2.19
0.89
0.64
0.76
0.46
5.97
5.21
6.35
5.21
8.89
1.91
0.89
2.30.08
1.0670.01
0.750.1
0.95
0.80.013
6.10.1
6.580.14
5.360.1
2.28BSC
9.20.2
20.1
2.38
1.14
0.89
1.14
0.58
6.22
5.52
6.73
5.46
9.65
2.28
1.27
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 9: On-state characteristics (maximum
values).
ITM(A)
4.0
100.0
VTM(V)
4.5
10.0
1.0
0.1
5.0
Tj = Tj max.
Tj = 25 C
Tj max
Vto = 0.85 V
Rt = 46 m
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