On-State Current
8 Amp
FS08...I
STANDARD SCR
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required.
Dec - 02
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER
CONDITIONS
Min.
Max.
Unit
Off-State Voltage
200 V 600 V
SYMBOL
I
T(AV)
I
TSM
I
TSM
I
2
t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
180 Conduction Angle, T
c
= 110 C
Half Cycle,
= 180 , T
C
= 110 C
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t
p
= 10ms, Half Cycle
I
GR
= 10 A
20 s max.
20 s max.
20ms max.
10s max.
-40
-40
A
A
A
A
A
2
s
V
A
W
W
C
C
C
8
5
73
70
24.5
5
4
5
1
+125
+150
260
IPAK
(Plastic)
K
A
G
A
Gate Trigger Current
>0.5 to <15 mA
Repetitive Peak Off State
Voltage
PARAMETER
CONDITIONS
VOLTAGE
Unit
SYMBOL
V
DRM
V
RRM
R
GK
= 1 K
B
200
V
D
400
M
600
FS08...I
STANDARD SCR
Dec - 02
PART NUMBER INFORMATION
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
S
08
08
B
I
00
FORMING
TU
PACKAGING
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
V
D
= 12 V
DC
, R
L
= 33
. T
j
= 25 C
mA
mA
A
V
V
V
MIN
MAX
MAX
MAX
MAX
MAX
MIN
MAX
/ I
RRM
V
TM
V
GT
V
GD
I
H
di / dt
R
th(j-a)
Critical Rate of Current Rise
Thermal Resistance
Junction-Amb
C/W
V
D
= V
DRM
,
T
j
= 125 C
T
j
= 25 C
V
R
= V
RRM
,
at I
T
= 16 Amp, tp = 380 s, T
j
= 25 C
I
T
= 100 mA
,
Tr
100 ns, T
j
= 125 C
V
D
= 12 V
DC
, R
L
= 33
, T
j
= 25 C
V
D
= V
DRM
, R
L
= 3.3K
,
T
j
= 125 C
mA
MIN
A/s
R
d
T
j
= 125 C
R
d
Dynamic resistance
MAX
m
MAX
I
L
mA
Latching Current
I
G
= 1.2 I
GT
V/s
dv / dt
Critical Rate of Voltage Rise
V
D
= 0.67 x V
DRM
,
MIN
R
th(j-c)
Thermal Resistance
Junction-Case for DC
C/W
V
t0
T
j
= 125 C
Threshold Voltage
MAX
V
Gate Open
Gate Open
R
GK
= 220
I
G
= 2 x I
GT
08
0.5
5
2
5
1.6
1.3
0.2
50
20
100
40
150
09
2
15
25
50
0.85
46
T
j
= 125 C
T
j
= 125 C
50
30
Dec - 02
FS08...I
STANDARD SCR
Fig. 1: Maximum average power dissipation
versus average on-state current.
0
2
10
8
6
4
2
0
4
6
P (W)
IT(av)(A)
1
3
5
7
1.0
K = [Zth(j-c) / Rth (j-c)]
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-3
1E-2
1E-1
1E+0
tp (s)
0.5
0.2
0.1
360
Fig. 2: Average and D.C. on-state current
versus case temperature.
I T(av) (A)
T case (C)
10
8
6
4
2
0
0
25
50
75
100
125
= 180
D.C.
IGT, IH (Tj) / IGT, IH (Tj = 25 C)
Fig. 4: Relative variation of gate trigger
current, holding and latching current versus
junction temperature.
Tj (C)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
20
60
80 100
0
40
120 140
IGT
IH & IL
1
10
100
1000
Fig. 5: Non repetitive surge peak on-state
current versus number of cycles.
80
70
60
50
40
30
20
10
0
I TSM (A)
Number of
cycles
Tj initial = 25 C
F = 50 Hz
300
1
10
ITSM(A). I
2
t (A
2
s)
Fig. 6: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I
2
t.
tp(ms)
2
5
100
10
ITSM
20
50
I
2
t
Tj initial = 25 C
Dec - 02
FS08...I
STANDARD SCR
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 9: On-state characteristics (maximum
values).
ITM(A)
4.0
100.0
VTM(V)
4.5
10.0
1.0
0.1
5.0
Tj = Tj max.
Tj = 25 C
Tj max
Vto = 0.85 V
Rt = 46 m
PACKAGE MECHANICAL DATA
IPAK TO 251-AA
Marking: type number
Weight: 0.2 g
1x0.15
E
D
L3
L1
L
b
e
b1
H
8
2
A
8
2
8
2
8
2
c2
c
A1
D1
E1
8
2
A
A1
b
b1
c
c2
D
D1
E
E1
e
L
L1
L3
REF.
DIMENSIONS
Milimeters
Min.
Nominal
Max.
2.19
0.89
0.64
0.76
0.46
5.97
5.21
6.35
5.21
8.89
1.91
0.89
2.30.08
1.0670.01
0.750.1
0.95
0.80.013
6.10.1
6.580.14
5.360.1
2.28BSC
9.20.2
20.1
2.38
1.14
0.89
1.14
0.58
6.22
5.52
6.73
5.46
9.65
2.28
1.27
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