On-State Current
10 Amp
FS1009.H
STANDARD SCR
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose high current applications where
moderate gate insensitivity is required.
Dec - 02
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER
CONDITIONS
Min.
Max.
Unit
Gate Trigger Current
> 2 mA to < 15 mA
Off-State Voltage
200 V 600 V
SYMBOL
I
T(AV)
I
TSM
I
TSM
I
2
t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
180 Conduction Angle, T
c
= 100 C
Half Cycle,
= 180 , T
C
= 100 C
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t
p
= 10ms, Half Cycle
I
GR
= 10 A
20 s max.
20 s max.
20ms max.
10s max.
-40
-40
A
A
A
A
A
2
s
V
A
W
W
C
C
C
10
6.4
105
100
50
5
4
10
1
+125
+150
260
TO220-AB
K
A
G
Repetitive Peak Off State
Voltage
PARAMETER
CONDITIONS
VOLTAGE
Unit
SYMBOL
V
DRM
V
RRM
R
GK
= 1 K
B
200
V
D
400
M
600
FS1009.H
STANDARD SCR
Dec - 02
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
V
D
= 12 V
DC
, R
L
= 33
. T
j
= 25 C
mA
09
2
15
2
0.01
1.6
1.5
0.2
mA
V
V
V
MIN
MAX
MAX
MAX
MAX
MAX
MIN
50
60
MAX
/ I
RRM
V
TM
V
GT
V
GD
I
H
di / dt
R
th(j-a)
Critical Rate of Current Rise
Thermal Resistance
Junction-Amb
C/W
V
D
= V
DRM
, R
GK
= 220
T
j
= 125 C
T
j
= 25 C
V
R
= V
RRM
,
at I
T
= 20 Amp, tp = 380 s, T
j
= 25 C
I
T
= 100 mA
, Gate open
PART NUMBER INFORMATION
V
D
= 12 V
DC
, R
L
= 33
, T
j
= 25 C
V
D
= V
DRM
, R
L
= 3.3K
, R
GK
= 220
,
T
j
= 110 C
mA
MIN
A/s
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
S
10
09
B
H
00
FORMING
TU
PACKAGING
R
d
T
j
= 125 C
R
d
Dynamic resistance
MAX
30
m
30
TYP
I
L
mA
50
Latching Current
I
G
= 1.2 I
GT
V/s
dv / dt
Critical Rate of Voltage Rise
V
D
= 0.67 x V
DRM
, Gate open
MIN
200
2.5
R
th(j-c)
Thermal Resistance
Junction-Case for DC
C/W
V
t0
T
j
= 125 C
Threshold Voltage
MAX
0.85
V
T
j
= 25 C
Tr
100 ns, F = 60 Hz,
T
j
= 125 C
I
G
= 2 x I
GT
Dec - 02
FS1009.H
STANDARD SCR
1.0
K = [Zth(j-c) / Rth (j-c)]
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-3
1E-2
1E-1
1E+0
tp (s)
0.5
0.2
0.1
IT(av)(A)
Fig. 1: Maximum average power dissipation
versus average on-state current.
0
25
50
75
100
125
Fig. 2: Average and D.C. on-state current
versus case temperature.
P (W)
Tc (C)
IT(av)(A)
0
2
4
6
8
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
1
3
5
7
9
1
3
5
7
9
11
13
10
IGT, IH (Tj) / IGT, IH (Tj = 25 C)
Fig. 4: Relative variation of gate trigger
current and holding current versus junction
temperature.
Tj (C)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
20
60
80 100
0
40
120 140
IGT
IH
1
10
100
1000
Fig. 5: Non repetitive surge peak on-state
current versus number of cycles.
160
140
120
100
80
60
40
20
0
I TSM (A)
Number of cycles
Tj initial = 25 C
F = 50 Hz
1000
ITSM(A). I
2
t (A
2
s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I
2
t.
tp(ms)
100
10
ITSM
I
2
t
Tj initial = 25 C
1
10
Dec - 02
FS1009.H
STANDARD SCR
PACKAGE MECHANICAL DATA
TO-220AB
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
I2
I3
M
REF.
DIMENSIONS
Milimeters
Min.
Nominal
Max.
15.20
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
15.80
2.65
1.14
1.14
3.75
16.40
2.60
15.90
14.00
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.85
16.80
2.95
1.70
1.70
14
a1
L
A
e
a2
b1
12
13
I
B
c
F
b2
c2
c1
M
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 8: On-state characteristics (maximum
values).
ITM(A)
4.0
100.0
VTM(V)
4.5
10.0
1.0
0.1
5.0
Tj = Tj max.
Tj = 25 C
Tj max
Vto = 0.85 V
Rt = 46 m
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