On-State Current
4 Amp
FT04...I
HIGH COMMUTATION TRIAC
This series of TRIACs uses a high
performance PNPN technology.
These parts are intended for general
purpose applications.
Apr - 03
IPAK
(Plastic)
Gate Trigger Current
< 25 mA to < 35 mA
Off-State Voltage
200 V 600 V
MT1
MT2
G
MT2
Repetitive Peak Off State
Voltage
PARAMETER
VOLTAGE
Unit
SYMBOL
V
DRM
V
RRM
B
200
V
M
600
D
400
Absolute Maximum Ratings, according to IEC publication No. 134
RMS On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER
CONDITIONS
Min.
Max.
Unit
SYMBOL
I
TSM
I
TSM
I
2
t
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
All Conduction Angle, T
c
= 110 C
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t
p
= 10 ms, Half Cycle
20 s max.
20 s max.
20 ms max.
4.5 mm from case, 10s max.
-40
-40
A
A
A
A
2
s
A
W
W
A/s
C
C
C
4
31
30
5.1
4
3
1
50
+125
+150
260
di/dt
Tr
100 ns, F = 120 Hz
T
j
= 125 C
I
G
= 2 x I
GT
FT04...I
HIGH COMMUTATION TRIAC
Apr - 03
PART NUMBER INFORMATION
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
T
04
11
B
I
00
FORMING
TU
PACKAGING
Gate Trigger Current
Off-State Leakage Current
Threshold Voltage
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
V
D
= 12 V
DC
, R
L
= 30
, T
j
= 25 C
mA
mA
A
V
m
V
V
V
mA
mA
V/s
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MAX
MIN
/I
RRM
V
TM
*
V
GT
V
GD
I
H
*
I
L
dv / dt*
R
th(j-a)
Thermal Resistance
Junction-Ambient
V
D
= V
DRM
,
T
j
= 125 C
T
j
= 25 C
V
R
= V
RRM
,
I
T
= 5.5 Amp, tp = 380 s, T
j
= 25 C
V
D
= 12 V
DC
, R
L
= 30
, T
j
= 25 C
I
T
= 100 mA
,
Gate Open T
j
= 25 C
I
G
= 1.2 I
GT
,
T
j
= 25 C
V
D
= 0.67 x V
DRM
, Gate open
T
j
= 110 C
Quadrant
Q1Q3
Q1Q3
Q1Q3
Q1, Q3
Q2
V
D
= V
DRM
, R
L
= 3.3K
, T
j
= 125 C
C/W
C/W
(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.
R
th(j-c)
Thermal Resistance
Junction-Case for AC
V
to
R
d
T
j
= 125 C
T
j
= 125 C
11
25
1
5
0.9
120
1.6
1.3
0.2
2.6
100
25
25
50
200
14
35
35
50
60
400
Electrical Characteristics
Apr - 03
Fig. 1: Maximum RMS power dissipation
versus RMS on-state current.
0
20
7
6
5
4
3
2
1
0
40
60
80
100 120 140
P (W)
Fig. 2: Correlation between maximum
RMS power dissipation and maximum
allowable temperature (Tamb and T case).
T case (C)
-75
-85
-95
-105
-115
-125
Fig. 3: RMS on-state current versus case
temperature.
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt (Tj)
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
-40 -20
0
60
80 100 120 140
Igt (Tj = 25 C)
Ih (Tj)
Ih (Tj = 25 C)
40
20
1
10
100
1000
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
40
30
20
10
0
I TSM (A)
Tj initial = 25 C
1.00
0.10
0.01
Zth(j-a) / Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
FT04...I
HIGH COMMUTATION TRIAC
5
4
3
2
1
0
I T(RMS) (A)
0
20
40
60
80
100
120
= 180
10
30
50
70
90
110
130
Igt
Ih
0
1
7
6
5
4
3
2
1
0
2
3
4
P (W)
180
Tamb (C)
Tj (C)
Number of cycles
tp (s)
Tamb (C)
IT(RMS)(A)
= 30
= 60
= 90
= 120
= 180
Rth (j-a)
Rth (j-c)
FT04...I
HIGH COMMUTATION TRIAC
100
10
1
Fig. 8: On-state characteristics (maximum
values).
1
10
ITSM(A). I
2
t (A
2
s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp
10 ms, and corresponding value of I
2
t.
Tj initial = 25 C
tp(ms)
I
2
t
ITSM
PACKAGE MECHANICAL DATA
IPAK TO 251-AA
Marking: type number
Weight: 0.2 g
1x0.15
E
D
L3
L1
L
b
e
b1
H
8
2
A
8
2
8
2
8
2
c2
c
A1
D1
E1
8
2
A
A1
b
b1
c
c2
D
D1
E
E1
e
L
L1
L3
REF.
DIMENSIONS
Milimeters
Min.
Nominal
Max.
2.19
0.89
0.64
0.76
0.46
5.97
5.21
6.35
5.21
8.89
1.91
0.89
2.30.08
1.0670.01
0.750.1
0.95
0.80.013
6.10.1
6.580.14
5.360.1
2.28BSC
9.20.2
20.1
2.38
1.14
0.89
1.14
0.58
6.22
5.52
6.73
5.46
9.65
2.28
1.27
Apr - 03
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
ITM(A)
4.0
100.0
VTM(V)
4.5
10.0
1.0
0.1
5.0
Tj = Tj max.
Tj = 25 C
Tj max
Vto = 0.8 V
Rd = 60 m
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