On-State Current
4 Amp
FT04...D
SURFACE MOUNT TRIAC
This series of TRIACs uses a high performance
PNPN technology.
These devices are intended for AC control
applications using surface mount technology.
The high commutation performances combined with
high sensitivity, make them perfect in all applications
like solid state relays, home appliances, power tools,
small motor drives...
Jul - 03
Absolute Maximum Ratings, according to IEC publication No. 134
RMS On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
Lead Temperature for Soldering
I
T(RMS)
PARAMETER
CONDITIONS
Min.
Max.
Unit
DPAK
(Plastic)
Gate Trigger Current
< 5 mA to < 35 mA
Off-State Voltage
200 V 600 V
SYMBOL
I
TSM
I
TSM
I
2
t
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
L
All Conduction Angle, T
C
= 110 C
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t
p
= 10 ms, Half Cycle
20 s max.
20 s max.
20 ms max.
4.5 mm from case, 10s max.
4
31
30
5.1
50
-40
-40
A
A
A
A
2
s
A
W
W
A/s
C
C
C
4
3
1
+125
+150
260
Repetitive Peak Off State
Voltage
PARAMETER
VOLTAGE
Unit
SYMBOL
V
DRM
V
RRM
B
200
V
M
600
di/dt
MT1
MT2
G
MT2
D
400
Tr
200 ns, F = 120 Hz
T
j
= 125 C
I
G
= 2 x I
GT
FT04...D
SURFACE MOUNT TRIAC
Jul - 03
t
gd
Gate Controlled
Delay Time
PART NUMBER INFORMATION
s
I
G
= 2xI
GT
, V
D
= V
DRM
di
G
/dt = 3 A/s, I
TM
= 5.5 A
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
T
04
11
B
D
00
FORMING
TR
PACKAGING
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
Threshold Voltage
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
(1)
I
DRM
V
D
= 12 V
DC
, R
L
= 30
mA
1
5
0.9
120
1.6
1.3
0.2
2
2.6
70
mA
mA
A
V
m
V
V
V
mA
mA
V/s
A/ms
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MAX
MIN
MIN
MIN
MIN
TYP
/I
RRM
V
TM
(2)
V
GT
V
GD
I
H
(2)
I
L
dv / dt
(2)
R
th(j-a)
Thermal Resistance
Junction-Ambient
T
j
= 25 C
V
R
= V
DRM
,
I
T
= 5.5 Amp, tp = 380 s, T
j
= 25 C
V
D
= 12 V
DC
, R
L
= 30
, T
j
= 25 C
I
T
= 100 mA
, Gate open, T
j
= 25 C
I
G
= 1.2 I
GT
,
T
j
= 25 C
V
D
= 0.67 x V
DRM
, Gate open
T
j
= 125 C
Quadrant
Q1Q3
Q4
Q1Q3
Q1Q3
Q1,Q3
Q2
Q1Q3
V
D
= V
DRM
, R
L
= 3.3K
, T
j
= 125 C
C/W
C/W
14
35
35
50
60
400
-
-
2.5
(1) Minimum I
GT
is guaranted at 5% of I
GT
max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
R
th(j-c)
Thermal Resistance
Junction-Case
(dI/dt)c
(2)
Critical Rate of Current Rise (dv/dt)c= 0.1 V/s T
j
= 125 C
(dv/dt)c= 10 V/s T
j
= 125 C
without snubber Tj = 125 C
V
to
(2)
R
d
(2)
T
j
= 125 C
T
j
= 125 C
11
25
25
25
50
200
4.4
2.7
-
08
10
10
10
15
20
1.8
0.9
-
T
j
= 125 C
T
j
= 25 C
V
R
= V
RRM
,
07
5
7
15
20
30
100
2.7
2.0
-
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Jul - 03
Fig. 1: Maximum power dissipation versus
RMS on-state current
0
20
40
60
80
100
P (W)
Fig. 2: Correlation between maximum power dissipation
and maximum allowable temperatures (Tamb and Tcase)
for different thermal resistances heatsink + contact.
T case (C)
-95
-100
-105
-110
Fig. 3: RMS on-state current versus ambient
temperature
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature
(typical values).
IGT, IH (Tj) / IGT, IH (Tj = 25 C)
1
10
100
1000
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
30
25
20
15
10
5
0
I TSM (A)
1.00
K = [(Zth(j-c) / Rth (j-c)]
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-3
1E-2
1E-1
1E+0
FT04...D
SURFACE MOUNT TRIAC
I T(RMS) (A)
0.0
1.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
2.0
3.0
4.0
P (W)
Tamb (C)
Tj (C)
Number of cycles
tp (s)
Tamb (C)
IT(RMS)(A)
0.5
1.5
2.5
3.5
180
= 180
= 120
= 90
= 60
= 30
10
30
50
70
90
110
= 180
Rth=0 C/W
Rth=5 C/W
Rth=10 C/W
Rth=15 C/W
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100
10
30
50
70
90
110
= 180
Rth(j-a) = Rth(j-c)
Rth(j-a) = 55 C/W
S(Cu) = 1.75 cm2
-40
0
2.5
2.0
1.5
1.0
0.5
0.0
40
80
120
-20
20
60
100
IH
IGT
Tj initial = 25 C
F = 50 Hz
0.50
0.20
0.10
Jul - 03
FT04...D
SURFACE MOUNT TRIAC
100
10
1
1
10
ITSM(A). I
2
t (A
2
s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp
10 ms, and corresponding value of I
2
t.
tp(ms)
2
5
Tj initial = 25 C
I
2
t
ITSM
Fig. 9: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 m).
Rth(j-a) (C/W)
S(Cu) (cm
2
)
0
100
80
60
40
20
0
2
4
6
8 10 12 14 16 18 20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 8: On-state characteristics (maximum
values).
ITM(A)
4.0
30.0
VTM(V)
4.5
10.0
1.0
0.1
5.0
Tj max
Vto = 0.95 V
Rd = 0.140m
Tj = Tj max.
Tj = 25 C
FT04...D
SURFACE MOUNT TRIAC
PACKAGE MECHANICAL DATA
DPAK TO 252-AA
A
A1
b
c
c1
c2
D
D1
E
E1
e
H
L
L1
L2
L3
L4
REF.
DIMENSIONS
Milimeters
Min.
Nominal
Max.
2.18
0
0.64
0.46
0.46
5.97
5.21
6.35
5.20
9.40
1.40
2.55
0.46
0.89
0.64
2.30.18
0.12
0.750.1
0.80.013
6.10.1
6.580.14
5.360.1
2.28BSC
9.900.15
2.60.05
0.50.013
1.200.05
0.830.1
2.39
0.127
0.89
0.61
0.56
6.22
5.52
6.73
5.46
10.41
1.78
2.74
0.58
1.27
1.02
Marking: type number
Weight: 0.2 g
8
2
E
L3
D
b
e
4.57 Typ.
1x0.15
H
1.6
L4
A
c2
8
2
8
2
8
2
8
2
L
L2
A1
1.067
0.013
E1
D1
Jul - 03
FOOT PRINT
6.7
6.7
3
1.6
2.3
2.3
1.6
3
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