On-State Current
10 Amp
FT10...H
HIGH COMMUTATION TRIAC
This series of TRIACs uses a high
performance PNPN technology.
These par ts are intended for general
purpose AC switching applications with
highly inductive loads.
Jun - 02
Absolute Maximum Ratings, according to IEC publication No. 134
TO220-AB
Gate Trigger Current
25 mA to
50 mA
Off-State Voltage
200 V 600 V
MT1
MT2
G
MT2
RMS On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Average Gate Power Dissipation
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
I
T(RMS)
PARAMETER
CONDITIONS
Min.
Max.
Unit
SYMBOL
I
TSM
I
2
t
I
GM
P
G(AV)
T
j
T
stg
All Conduction Angle, T
C
= 105 C
Full Cycle, 60 Hz
Full Cycle, 50 Hz
t
p
= 10 ms, Half Cycle
20 s max. T
j
=125C
T
j
=125C
I
G
= 2x I
GT
, t
r
100ns
f= 120 Hz, T
j
=125C
10
105
100
55
50
-40
-40
A
A
A
A
2
s
A
W
A/s
C
C
4
1
+125
+150
di/dt
I
TSM
Repetitive Peak Off State
Voltage
PARAMETER
VOLTAGE
Unit
SYMBOL
V
DRM
V
RRM
B
200
V
M
600
D
400
FT10...H
HIGH COMMUTATION TRIAC
Jun - 02
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
Threshold Voltage
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Current
Holding Current
Latching Current
Critical Rate of Voltage Rise
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
(1)
I
DRM
V
D
= 12 V
DC
, R
L
= 33
, T
j
= 25 C
mA
1
5
0.85
40
1.55
1.3
0.2
1.5
60
mA
A
V
m
V
V
V
mA
mA
V/s
A/ms
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MAX
MIN
MIN
MIN
MIN
/I
RRM
V
TM
(2)
V
GT
V
GD
I
H
(2)
I
L
dv / dt
(2)
R
th(j-a)
Thermal Resistance
Junction-Ambient
V
D
= V
DRM
,
T
j
= 125 C
T
j
= 25 C
V
R
= V
RRM
,
I
T
= 14 Amp, tp = 380 s, T
j
= 25 C
V
D
= 12 V
DC
, R
L
= 33
, T
j
= 25 C
I
T
= 500 mA
, Gate open, T
j
= 25 C
I
G
= 1.2 I
GT
,
T
j
= 25 C
V
D
= 0.67 x V
DRM
, Gate open
T
j
= 125 C
Quadrant
Q1Q3
Q1Q3
Q1Q3
Q1,Q3
Q2
V
D
= V
DRM
, R
L
= 3.3K
, T
j
= 125 C
C/W
C/W
16
50
50
70
80
1000
-
-
9
14
35
35
50
60
500
-
-
5.5
(1) Minimum I
GT
is guaranted at 5% of I
GT
max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
R
th(j-c)
Thermal Resistance
Junction-Case
for AC 360 conduction angle
(dI/dt)c
(2)
Critical Rate of Current Rise (dv/dt)c= 0.1 V/s T
j
= 125 C
(dv/dt)c= 10 V/s T
j
= 125 C
without snubber Tj = 125 C
V
to
(2)
R
d
(2)
T
j
= 125 C
T
j
= 125 C
PART NUMBER INFORMATION
FAGOR
TRIAC
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
T
10
11
B
H
00
FORMING
TU
PACKAGING
11
25
25
40
50
200
-
-
5
1
10
100
1000
130
120
110
100
90
80
70
60
50
40
30
20
10
0
I TSM (A)
Number of cycles
1E+0
1E-1
1E-2
K=[Zth / Rth]
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
tp (s)
IT(RMS)(A)
Jun - 02
Fig. 1: Maximum power dissipation versus
RMS on-state curren (full cycle).
0
25
50
75
100
125
Fig. 2: RMS on-state current versus case
temperature (full cycle).
Fig. 3: : Relative variation of thermal
impedance versus pulse duration.
Fig. 5: Surge peak on-state current versus
number of cycles
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp<10ms, and corresponding value of I
2
t.
Fig. 4: On-state characteristics (maximum
values)
FT10...H
HIGH COMMUTATION TRIAC
P (W)
Tc (C)
IT(RMS)(A)
0
2
4
6
12
8
10
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
100
10
1
ITM (A)
0.5 1.0 1.5 2.0 2.5 3.0
5.0
VTM (V)
Zth(j-c)
Zth(j-a)
3.5 4.0 4.5
Tj max
Vto = 0.85 V
Rt = 35m
0.01
0.10
1.00
10.00
1000
100
10
I TSM (A), I
2
t (A
2
s)
tp (ms)
Non repetitive
Tj initial = 25 C
Repetitive
Tc = 90 C
Tj initial = 25 C
dl/dt limitation
50A/s
1
3
5
7
9
11
1
3
5
7
9
11
13
Tj max
Tj = 25 C
t=20ms
One cycle
I
2
t
ITSM
FT10...H
HIGH COMMUTATION TRIAC
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
I2
I3
M
REF.
DIMENSIONS
Milimeters
Min.
Nominal
Max.
15.20
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
15.80
2.65
1.14
1.14
3.75
16.40
2.60
15.90
14.00
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.85
16.80
2.95
1.70
1.70
14
a1
L
A
e
a2
b1
12
13
I
B
c
F
b2
c2
c1
M
0
0.5
2.0
1.0
1.5
2.5
IGT,IH,IL[Tj]/IGT,IH,IL.[Tj=25C]
Fig. 7: Relative variation of gate trigger
current, holding current and latching versus
junction temperature (typical values)
Tj(C)
-40 -20 0 20 40 60 80 100120140
IGT
I
H
&I
L
Jun - 02
0
25
50
75
Fig. 8: Relative variation of critical rate of
decrease of main current versus junction
temperature
(dI/dt)c [Tj]/(dI/dc)c [Tj specified]
100
6
5
4
3
2
1
0
Tj(C)
125
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