On-State Current
16 Amp
FT16...H
HIGH COMMUTATION TRIAC
This series of TRIACs uses a high
performance PNPN technology.
These parts are intended for general
purpose AC switching applications with
highly inductive loads.
Absolute Maximum Ratings, according to IEC publication No. 134
TO220-AB
Gate Trigger Current
25 mA to
50 mA
Off-State Voltage
200 V 600 V
MT1
MT2
G
MT2
RMS On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Average Gate Power Dissipation
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
I
T(RMS)
PARAMETER
CONDITIONS
Min.
Max.
Unit
SYMBOL
I
TSM
I
2
t
I
GM
P
G(AV)
T
j
T
stg
All Conduction Angle, T
C
= 100 C
Full Cycle, 60 Hz
Full Cycle, 50 Hz
t = 10 ms, Half Cycle
20 s max. T
j
=125C
T
j
=125C
I
G
= 2x I
GT
, t
r
100ns
f= 120 Hz, T
j
=125C
16
170
160
150
50
-40
-40
A
A
A
A
2
s
A
W
A/s
C
C
4
1
+125
+150
di/dt
I
TSM
Jun - 03
Repetitive Peak Off State
Voltage
PARAMETER
VOLTAGE
Unit
SYMBOL
V
DRM
V
RRM
B
200
V
M
600
D
400
FT16...H
HIGH COMMUTATION TRIAC
Jun - 03
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
Threshold Voltage
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
(1)
I
DRM
V
D
= 12 V
DC
, R
L
= 30
, T
j
= 25 C
mA
2
5
0.85
25
1.55
1.3
0.2
1.2
60
mA
A
V
m
V
V
V
mA
mA
V/s
A/ms
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MAX
MIN
MIN
MIN
MIN
/I
RRM
V
TM
(2)
V
GT
V
GD
I
H
(2)
I
L
dv / dt
(2)
R
th(j-a)
Thermal Resistance
Junction-Ambient
V
D
= V
DRM
,
T
j
= 125 C
T
j
= 25 C
V
R
= V
RRM
,
I
T
= 22.5 Amp, tp = 380 s, T
j
= 25 C
V
D
= 12 V
DC
, R
L
= 30
, T
j
= 25 C
I
T
= 100 mA
, Gate open, T
j
= 25 C
I
G
= 1.2 I
GT
,
T
j
= 25 C
V
D
= 0.67 x V
DRM
, Gate open
T
j
= 125 C
Quadrant
Q1Q3
Q1Q3
Q1Q3
Q1,Q3
Q2
V
D
= V
DRM
, R
L
= 3.3K
, T
j
= 125 C
C/W
C/W
R
GK
= 1K
,
16
50
50
70
80
1000
-
-
14
14
35
35
50
60
500
-
-
8.5
(1) Minimum I
GT
is guaranted at 5% of I
GT
max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
R
th(j-c)
Thermal Resistance
Junction-Case
for AC 360 conduction angle
(dI/dt)c
(2)
Critical Rate of Current Rise (dv/dt)c= 0.1 V/s T
j
= 125 C
(dv/dt)c= 10 V/s T
j
= 125 C
without snubber Tj = 125 C
V
to
(2)
R
d
(2)
T
j
= 125 C
T
j
= 125 C
PART NUMBER INFORMATION
FAGOR
TRIAC
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
T
16
11
B
H
00
FORMING
TU
PACKAGING
11
25
25
40
50
200
-
-
7.1
1
10
100
1000
180
160
140
120
100
80
60
40
20
0
I TSM (A)
Number of cycles
1E+0
1E-1
1E-2
K=[Zth / Rth]
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
tp (s)
IT(RMS)(A)
Jun - 03
Fig. 1: Maximum power dissipation versus
RMS on-state curren (full cycle).
0
25
50
75
100
125
Fig. 2: RMS on-state current versus case
temperature (full cycle).
Fig. 3: : Relative variation of thermal
impedance versus pulse duration.
Fig. 5: Surge peak on-state current versus
number of cycles
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp<10ms, and corresponding value of I
2
t.
Fig. 4: On-state characteristics (maximum
values)
FT16...H
HIGH COMMUTATION TRIAC
P (W)
Tc (C)
IT(RMS)(A)
0
2
4
6
16
8
10 12 14
0
2
4
6
16
8
10
12
14
18
20
0
2
4
6
16
8
10
12
14
18
200
100
10
1
ITM (A)
0.5 1.0 1.5 2.0 2.5 3.0
5.0
VTM (V)
Zth(j-c)
Zth(j-a)
3.5 4.0 4.5
Tj = 25 C
Tj max
Tj max
Vto = 0.55 V
Rt = 25m
0.01
0.10
1.00
10.00
3000
1000
100
I TSM (A), I
2
t (A
2
s)
tp (ms)
Non repetitive
Tj initial = 25 C
Repetitive
Tc = 85 C
Tj initial = 25 C
ITSM
I
2
t
dl/dt limitation
50A/s
t=20ms
One cycle
0
0.5
2.0
1.0
1.5
2.5
FT16...H
HIGH COMMUTATION TRIAC
0
25
50
75
Fig. 8: Relative variation of critical rate of
decrease of main current versus junction
temperature
(dI/dt)c [Tj]/(dI/dc)c [Tj specified]
100
6
5
4
3
2
1
0
IGT,IH,IL[Tj]/IGT,IH,IL.[Tj=25C]
Fig. 7: Relative variation of gate trigger
current, holding current and latching versus
junction temperature (typical values)
Tj(C)
Tj(C)
125
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
I2
I3
M
REF.
DIMENSIONS
Milimeters
Min.
Nominal
Max.
15.20
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
15.80
2.65
1.14
1.14
3.75
16.40
2.60
15.90
14.00
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.85
16.80
2.95
1.70
1.70
-40 -20 0 20 40 60 80 100 120 140
IGT
I
H
&I
L
14
a1
L
A
e
a2
b1
12
13
I
B
c
F
b2
c2
c1
M
Jun - 03
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